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SA601
Low voltage LNA and mixer – 1 GHz
Product data
Supersedes data of 1994 Dec 15
2004 Dec 14
INTEGRATED CIRCUITS
Philips Semiconductors Product data
SA6011GHz low voltage LNA and mixer
2
2004 Dec 14
DESCRIPTION
The SA601 is a combined RF amplifier and mixer designed for
high-performance low-power communication systems from
800-1200MHz. The low-noise preamplifier has a 1.6dB noise figure
at 900MHz with 11.5dB gain and an IP3 intercept of -2dBm at the
input. The gain is stabilized by on-chip compensation to vary less
than ±0.2dB over -40 to +85°C temperature range. The
wide-dynamic-range mixer has a 9.5dB noise figure and IP3 of
–2dBm at the input at 900MHz. The nominal current drawn from a
single 3V supply is 7.4mA. The Mixer can be powered down to
further reduce the supply current to 4.4mA.
FEATURES
Low current consumption: 7.4mA nominal, 4.4mA with the mixer
powered-down
Outstanding LNA noise figure: 1.6dB at 900MHz
High system power gain: 18dB (LNA + Mixer) at 900MHz
Excellent gain stability versus temperature and supply voltage
External >-7dBm LO can be used to drive the mixer
PIN CONFIGURATION
DK Package
1
2
3
4
5
6
7
8
9
10
11
12
13
14
20
19
18
17
16
15
V
CC
GND
LNA OUT
GND
MIXER IN
GND
MIXER OUT
MIXER OUT
GND
V
CC
V
CC
LNA GND
LNA IN
GND
GND
GND
MIXER PWRDN
GND
LOIN1
LOIN2
SR00059
Figure 1. Pin Configuration
APPLICATIONS
900MHz cellular front-end (NADC, GSM, AMPS, TACS)
900MHz cordless front-end (CT1, CT2)
900MHz receivers
ORDERING INFORMATION
DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #
20-Pin Plastic Shrink Small Outline Package (Surface-mount, SSOP)
-40 to +85°C
SA601DK SOT266-1
BLOCK DIAGRAM
43215
20 19 18 17 16
761098
15 14 13 12 11
GNDMIXER
PWRDN
LO IN1 LO IN2
V
CC
GND
MIXER
IN GND
MIXER
OUT GND
LNA
LO
RF
IF
GND LNA IN GND
IF
GND
LNA
OUT
GNDGND
MIXER
OUT V
CC
V
CC
BUFFER
SR00058
Figure 2. Block Diagram
Philips Semiconductors Product data
SA6011GHz low voltage LNA and mixer
2004 Dec 14
3
ABSOLUTE MAXIMUM RATINGS
3
SYMBOL
PARAMETER RATING UNITS
V
CC
Supply voltage
1
-0.3 to +6 V
V
IN
Voltage applied to any other pin -0.3 to (V
CC
+ 0.3) V
P
D
Power dissipation, T
A
= 25°C (still air)
2
20-Pin Plastic SSOP 980 mW
T
JMAX
Maximum operating junction temperature 150 °C
P
MAX
Maximum power input/output +20 dBm
T
STG
Storage temperature range –65 to +150 °C
NOTE:
1. Transients exceeding 8V on V
CC
pin may damage product.
2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance,
θ
JA
: 20-Pin SSOP = 110°C/W
3. Pins 9 and 10 are sensitive to electrostatic discharge (ESD).
RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER RATING UNITS
V
CC
Supply voltage 2.7 to 5.5 V
T
A
Operating ambient temperature range -40 to +85 °C
T
J
Operating junction temperature -40 to +105 °C
DC ELECTRICAL CHARACTERISTICS
V
CC
= +3V, T
A
= 25°C; unless otherwise stated.
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
UNITS
SYMBOL
PARAMETER
TEST
CONDITIONS
MIN TYP MAX
UNITS
I
CC
Su
pp
ly current
7.4
mA
I
CC
Su ly
current
Mixer power-down input low 4.4
mA
V
LNA–IN
LNA input bias voltage 0.78 V
V
LNA–OUT
LNA output bias voltage 2.1 V
V
MX–IN
Mixer RF input bias voltage 0.94 V

SA601DK,112

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
IC MIXER LNA 1GHZ 20SSOP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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