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AOWF412

P1-P3P4-P6P7-P7
AOWF412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
2
4
6
8
10
0 10 20 30 40 50
V
GS
(Volts)
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
400
800
1200
1600
2000
2400
2800
3200
3600
0 20 40 60 80 100
Capacitance (pF)
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
iss
0
200
400
600
800
1000
0.0001 0.001 0.01 0.1 1 10 100
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to
-
Case (Note F)
C
oss
C
rss
V
DS
=50V
I
D
=20A
T
J(Max)
=175°C
T
C
=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100 1000
I
D
(Amps)
V
DS
(Volts)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
µ
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=175°C
T
C
=25°C
100
µ
40
0
2
4
6
8
10
0 10 20 30 40 50
V
GS
(Volts)
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
400
800
1200
1600
2000
2400
2800
3200
3600
0 20 40 60 80 100
Capacitance (pF)
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
iss
0
200
400
600
800
1000
0.0001 0.001 0.01 0.1 1 10 100
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to
-
Case (Note F)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Z
θ
θ
θ
θJC
Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
C
oss
C
rss
V
DS
=50V
I
D
=20A
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=175°C
T
C
=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100 1000
I
D
(Amps)
V
DS
(Volts)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
µ
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=175°C
T
C
=25°C
100
µ
R
θJC
=4.5°C/W
Rev0: August 2010 www.aosmd.com Page 4 of 7
AOWF412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0.1
1
10
100
1 10 100 1000
I
AR
(A) Peak Avalanche Current
Time in avalanche, t
A
(µ
µµ
µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
0
5
10
15
20
25
30
35
40
0 25 50 75 100 125 150 175
Power Dissipation (W)
T
CASE
(°
°°
°C)
Figure 13: Power De-rating (Note F)
0
5
10
15
20
25
30
35
0 25 50 75 100 125 150 175
Current rating I
D
(A)
T
CASE
(°
°°
°C)
Figure 14: Current De-rating (Note F)
T
A
=25°C
1
10
100
1000
0.0001 0.01 1 100 10000
Power (W)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note G)
T
A
=25°C
T
A
=150°C
T
A
=100°C
T
A
=125°C
40
0.001
0.01
0.1
1
10
0.001 0.01 0.1 1 10 100 1000
Z
θ
θ
θ
θJA
Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
1
10
100
1 10 100 1000
I
AR
(A) Peak Avalanche Current
Time in avalanche, t
A
(µ
µµ
µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
0
5
10
15
20
25
30
35
40
0 25 50 75 100 125 150 175
Power Dissipation (W)
T
CASE
(°
°°
°C)
Figure 13: Power De-rating (Note F)
0
5
10
15
20
25
30
35
0 25 50 75 100 125 150 175
Current rating I
D
(A)
T
CASE
(°
°°
°C)
Figure 14: Current De-rating (Note F)
T
A
=25°C
1
10
100
1000
0.0001 0.01 1 100 10000
Power (W)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note G)
T
A
=25°C
T
A
=150°C
T
A
=100°C
T
A
=125°C
R
θJA
=60°C/W
Rev0: August 2010 www.aosmd.com Page 5 of 7
AOWF412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
20
60
100
140
180
220
0 5 10 15 20 25 30
I
rm
(A)
Q
rr
(nC)
I
S
(A)
Figure 17: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
di/dt=800A/µs
125ºC
125ºC
25ºC
25ºC
Q
rr
I
rm
0
10
20
30
40
50
20
40
60
80
100
120
140
160
180
0 200 400 600 800 1000
I
rm
(A)
Q
rr
(nC)
di/dt (A/µ
µµ
µs)
Figure 19: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
125ºC
125ºC
25ºC
25ºC
I
s
=20A
Q
rr
I
rm
0
0.5
1
1.5
2
0
5
10
15
20
25
30
0 5 10 15 20 25 30
S
t
rr
(ns)
I
S
(A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
di/dt=800A/µs
125ºC
125ºC
25ºC
25ºC
t
rr
S
0
0.5
1
1.5
2
0
5
10
15
20
25
30
35
0 200 400 600 800 1000
S
t
rr
(ns)
di/dt (A/µ
µµ
µs)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
125ºC
25ºC
25ºC
125º
I
s
=20A
t
rr
S
0
10
20
30
40
50
20
60
100
140
180
220
0 5 10 15 20 25 30
I
rm
(A)
Q
rr
(nC)
I
S
(A)
Figure 17: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
di/dt=800A/µs
125ºC
125ºC
25ºC
25ºC
Q
rr
I
rm
0
10
20
30
40
50
20
40
60
80
100
120
140
160
180
0 200 400 600 800 1000
I
rm
(A)
Q
rr
(nC)
di/dt (A/µ
µµ
µs)
Figure 19: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
125ºC
125ºC
25ºC
25ºC
I
s
=20A
Q
rr
I
rm
0
0.5
1
1.5
2
0
5
10
15
20
25
30
0 5 10 15 20 25 30
S
t
rr
(ns)
I
S
(A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
di/dt=800A/µs
125ºC
125ºC
25ºC
25ºC
t
rr
S
0
0.5
1
1.5
2
0
5
10
15
20
25
30
35
0 200 400 600 800 1000
S
t
rr
(ns)
di/dt (A/µ
µµ
µs)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
125ºC
25ºC
25ºC
125º
I
s
=20A
t
rr
S
Rev0: August 2010 www.aosmd.com Page 6 of 7
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AOWF412

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Description:
MOSFET N-CH 100V 7.8A TO262F
Lifecycle:
New from this manufacturer.
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