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SI1470DH-T1-E3

P1-P3P4-P6P7-P7
www.vishay.com
4
Document Number: 74277
S10-0646-Rev. B, 22-Mar-10
Vishay Siliconix
Si1470DH
TYPICAL CHARACTERISTICS T
A
= 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.01
1
10
1.0
0.1
0 0.2 0.4 0.6 0.8 1.2
T = 150 °C
J
T = 25 °C
J
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
0.5
0.7
0.9
1.1
1.3
1.5
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
T
J
- Temperature (°C)
V
)
ht
(
SG
)
V(
R
DS(on)
vs. V
GS
vs. Temperature
Single Pulse Power
0.00
0.04
0.08
0.12
0.16
012345
V
GS
- Gate-to-Source Voltage (V)
R
)no(SD
(Ω ecnatsiseR-nO ecruoS-ot-niarD -)
T
A
= 25 °C
T
A
= 125 °C
I
D
= 3.7 A
0
20
30
5
15
)W(
r e w o P
Time (s)
25
1 6001000.001
0.1
100.01
10
Safe Operating Area, Junction-to-Ambient
100
0.001
10
0.01
0.1
100
10
1
0.1
1
T
A
= 25 °C
Single Pulse
Limited by R
DS(on)
*
10 ms
100 ms
1 s
10 s
DC
V
DS
- Drain-to-Source Voltage (V)
*V
GS
> minimum V
GS
at which R
DS(on)
is specied
- Drain Current (A)
I
D
Document Number: 74277
S10-0646-Rev. B, 22-Mar-10
www.vishay.com
5
Vishay Siliconix
Si1470DH
TYPICAL CHARACTERISTICS T
A
= 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
2
4
6
0 25 50 75 100 125 150
5
3
1
Package Limited
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Power Derating
0.0
0.6
1.2
1.8
2.4
3.0
3.6
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
)
W
(
r
e
w
o
P
www.vishay.com
6
Document Number: 74277
S10-0646-Rev. B, 22-Mar-10
Vishay Siliconix
Si1470DH
TYPICAL CHARACTERISTICS T
A
= 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74277
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
110 60010
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
t n e i s n a r T e v i t c e f f E d e z i l a m r o N
e c n a d e p m I l a m r e h T
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 100 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
11010
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
t n e i s n a r T
e
v
i
t c
e
f
f
E
d e
z i
l a m r o N
e c n a d e
p
m I
l a m
r
e
h
T
P1-P3P4-P6P7-P7

SI1470DH-T1-E3

Mfr. #:
Buy SI1470DH-T1-E3
Manufacturer:
Vishay
Description:
IGBT Transistors MOSFET 30V 4.0A 2.8W 66mohm @ 4.5V
Lifecycle:
New from this manufacturer.
Delivery:
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