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VRF152MP

P1-P3P4-P6
VRF152
VRF152MP
50V, 150W, 175MHz
The VRF152 is a gold-metallized silicon n-channel RF power transistor de-
signed for broadband commercial and military applications requiring high power
and gain without compromising reliability, ruggedness, or inter-modulation
distortion.
FEATURES
• Improved Ruggedness V
(BR)DSS
= 130V
• 150W with 22dB Typical Gain @ 30MHz, 50V
• 150W with 14dB Typical Gain @ 175MHz, 50V
• Excellent Stability & Low IMD
• Common Source Conguration
• Available in Matched Pairs
• 70:1 Load VSWR Capability at Specied Operating Conditions
• Nitride Passivated
• Refractory Gold Metallization
• Low Rds Replacement for MRF151/ BLF177/ SD2941
• RoHS Compliant
Symbol Parameter VRF152(MP) Unit
V
DSS
Drain-Source Voltage 130 V
I
D
Continuous Drain Current @ T
C
= 25°C 20 A
V
GS
Gate-Source Voltage ±40 V
P
D
Total Device dissipation @ T
C
= 25°C 300 W
T
STG
Storage Temperature Range -65 to 150
°C
T
J
Operating Junction Temperature 200
RF POWER VERTICAL MOSFET
Maximum Ratings All Ratings: T
C
=25°C unless otherwise specied
Static Electrical Characteristics
Symbol Parameter Min Typ Max Unit
V
(BR)DSS
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 50mA) 130 V
R
DS(ON)
Drain-Source On-State Resistance
1
(V
GS
= 10V, I
D
= 10A) 0.13 0.20 Ohms
I
DSS
Zero Gate Voltage Drain Current (V
DS
= 50V, V
GS
= 0V) 50 μA
I
GSS
Gate-Source Leakage Current (V
GS
= ±20V, V
DS
= 0V) 1.0 μA
g
fs
Forward Transconductance (V
DS
= 10V, I
D
= 5A) 5.0 6.2 mhos
V
GS(TH)
Gate Threshold Voltage (V
DS
= 10V, I
D
= 100mA) 2.9 3.6 4.4 V
Microsemi Website - http://www.microsemi.com
050-4950 Rev D 3-2016
Thermal Characteristics
Symbol Characteristic Min Typ Max Unit
R
θ
JC
Junction to Case Thermal Resistance 0.60 °C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
M174
10
100
1000
0 20 40 60 80 100 120
VRF152(MP)
Dynamic Characteristics
Symbol Parameter Test Conditions Min Typ Max Unit
C
ISS
Input Capacitance V
GS
= 0V 383
pF
C
oss
Output Capacitance V
DS
= 50V 215
C
rss
Reverse Transfer Capacitance f = 1MHz 20
Functional Characteristics
Symbol Parameter Min Typ Max Unit
G
PS
f
1
= 30MHz, f
2
= 30.001MHz, V
DD
= 50V, I
DQ
= 250mA, P
out
= 150W
PEP
1
18 22
dB
G
PS
f = 175MHz, V
DD
= 50V, I
DQ
= 250mA, P
out
= 150W 14
η
D
f
1
= 30MHz, f
2
= 30.001MHz, V
DD
= 50V, I
DQ
= 250mA, P
out
= 150W
PEP
1
50 %
IMD
(d3)
f
1
= 30MHz, f
2
= 30.001MHz, V
DD
= 50V, I
DQ
= 250mA, P
out
= 150W
PEP
1
-30 dBc
ψ
f = 30MHz, V
DD
= 50V, I
DQ
= 250mA, P
out
= 150W
CW
70:1 VSWR - All Phase Angles, 0.2mSec X 20% Duty Factor
No Degradation in Output Power
1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone
Microsemi reserves the right to change, without notice, the specications and information contained herein.
050-4950 Rev D 3-2016
1
10
30
1 10 100 1000
20
0
5
10
15
20
25
30
35
40
0 2 4 6 8 10 12
0
5
10
15
20
25
30
35
40
45
0 4 8 12 16
C
iss
V
DS(ON
)
, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 1, Output Characteristics
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
T
J
= 125°C
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 3, Capacitance vs Drain-to-Source Voltage
C, CAPACITANCE
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 4, Forward Safe Operating Area
I
D
, DRAIN CURRENT (A)
V
GS
= 5V
6V
7V
8V
9V
10V
15V
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 2, Transfer Characteristics
250µs PULSE
TEST<0.5 % DUTY
CYCLE
T
J
= -55°C
T
J
= 25°C
C
oss
C
rss
R
ds(on)
DC line
I
DMax
T
J
= 125°C
T
C
= 75°C
Typical Performance Curves
Pdmax
13V
VRF152(MP)
050-4950 Rev D 3-2016
16
18
20
22
24
26
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0 50 100 150 200 250
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
10
-5
10
-4
10
-3
10
-2
10 1.0
-1
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
Peak T
J
= P
DM
x Z
θJC
+
T
C
Duty Factor D =
t
1
/
t
2
t
2
t
1
P
DM
Note:
t
1
= Pulse Duration
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
RECTANGULAR PULSE DURATION (seconds)
Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
0
50
100
150
200
250
0 0.2 0.4 0.6 0.8 1 1.2 1.4
OUTPUT POWER (WATTS PEP)
Figure 6. Gain and Efciency vs P
out
30MHz Efciency and Gain
OUTPUT POWER
INPUT POWER (WATTS PEP)
Figure 7. P
OUT
versus P
IN
Typical Performance Curves
Vdd=50V, Idq = 250mA,
Freq=30MHz
D = 0.9
8
10
12
14
0
0. 1
0. 2
0. 3
0. 4
0. 5
0. 6
0. 7
0. 8
0. 9
0 50 100 150 200 250
0
50
100
150
200
250
0 5 10 50 20
OUTPUT POWER (WATTS PEP)
Figure 8. Gain and Efciency vs P
out
175MHz Efciency and Gain
OUTPUT POWER
INPUT POWER (WATTS PEP)
Figure 9. P
OUT
versus P
IN
Vdd=50V, Idq = 250mA,
Freq=175MHz
P1-P3P4-P6

VRF152MP

Mfr. #:
Buy VRF152MP
Manufacturer:
Microchip / Microsemi
Description:
RF MOSFET Transistors FG, MOSFET, ARF, M174, MATCHED PAIR
Lifecycle:
New from this manufacturer.
Delivery:
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