Product Standards
Zener Diode
DE2S08200L
Absolute Maximum Ratings Ta = 25 °C
*1: Mounted on glass epoxy print board. ( 45 mm x 45 mm x 1 mm)
Solder in ( 0.8 mm x 0.6 mm)
*2:
Electrical Characteristics Ta = 25 °C ± 3 °C
1.
2. *1: The temperature must be controlled 25°C for VZ mesurement.
VZ value measured at other temperature must be adjusted to VZ (25°C)
*2: VZ guaranted 20 ms after current flow.
*3: Tj = 25°C to 150°C
Page
Internal Connection
4.5 mV/°C
µA
43 pF
Max
0.5
8.61
Parameter Symbol Conditions
Zener voltage
*1,*2
VZ IZ = 1 mA
Storage temperature
Tstg °C-55 to +150
Total power dissipation
*1
PT
Junction temperature
Tj
Electrostatic discharge
*2
ESD ±30 kV
V7.79
150 mW
150 °C
Unit: mm
1of
Unit
SOD-523
4
Min Typ
Halogen-free / RoHS compliant
Panasonic SSMini2-F5-B
JEITA SC-79
2. Anode
DE2S08200L
Silicon epitaxial planar type
For ESD protection
Features
y
y
Code
1. Cathode
3 000 pcs / reel (standard)
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Marking Symbol:
FC
Terminal capacitance
Ct VR = 0 V, f = 1 MHz
High ESD
Parameter Symbol Rating Unit
Packaging
Embossed type (Thermo-compression sealing) :
+85 °COperating ambient temperature Topr -40 to
Note)
Test method:IEC61000_4_2(C = 150 pF,R = 330 Ω, Contact discharge:10 times)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
Temperature coefficient of zener voltage
*3
SZ IZ = 1 mA
Reverse current
IR VR = 5 V
1
2
1.6
0.8
0.6
1.2
0.13
1
2
0.3
