BC847BS-TP

Mechanical Data
x Case: SOT-363, Molded Plastic
x
Polarity: See Diagram
BC847BS
Dual NPN Small
Signal Transistor
300mW
Features
x Ideally Suited for Automatic Insertion
x
Ultra-Small Surface Mount Package
x
For Switching and AF Amplifier Applications
Maximum Ratings @
@
25
к
Unless Otherwise Specified
Symbol Parameter Value Units
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage 45 Vdc
V
(BR)CBO
Collector-Base Breakdown Voltage 50 Vdc
V
(BR)EBO
Emitter-Base Breakdown Voltage 6.0Vdc
I
C
Collector Current 100 mAdc
I
CM
Peak Collector Current 200 mAdc
P
d
Power Dissipation @ T
A
=25
к
T
J
, T
STG
Operating & Storage Temperature -55~+150
к
SOT-363
DIMENSIONS
J
M
A
C
B
G
H
K
D
L
omponents
20736 Marilla Street Chatsworth
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Revision: A 2011/01/01
300 mW
Micro Commercial Components
MCC
TM
www.mccsemi.com
1 of 5
x Marking:1C
INCHES
MM
DIM MIN MAX MIN MAX NOTE
A .006 .014 0.15 0.35
B .045 .053 1.15 1.35
C .085 .096 2.15 2.45
D .026 0.65Nominal
G .047 .055 1.20 1.40
H .071 .087 1.80 2.20
J --- .004 --- 0.10
K .035 .043 0.90 1.10
L .010 .018 0.26 0.46
M .003 .006 0.08 0.15
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Electrical Characteristics @ 25
к
Unless Otherwise Specified
Symbol Parameter Min Typ Max Units Test Condition
OFF CHARACTERISTICS
h
FE
DCCurrent Gain 200---450---V
CE
=5.0V, I
C
=2.0mA
V
CE(SAT)
Collector-Emitter Saturation Voltage
---
---
---
250
650
mV
I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5.0mA
V
BE(ON)
Base-Emitter Voltage 580 665 700 mV V
CE
=5.0V, I
C
=2.0mA
I
CBO
Collector-Cutoff Current
--- --- 15 nA
V
CB
=30V, I
E
=0
f
T
Gain Bandwidth Product --- 200 --- MHz
V
CE
=5.0V, I
C
=10mA,
f=100MHz
C
OB
Collector-output Capacitance --- 2 --- pF V
CB
=10V, f=1.0MHz
Revision: A 2011/01/01
BC847BS
Micro Commercial Components
MCC
TM
www.mccsemi.com
2 of 5
BC847BS
Revision: A 2011/01/01
Micro Commercial Components
MCC
TM
Collector-Emitter Saturation
Voltage vs Collector Current
0.1 1 10 100
0.05
0.1
0.15
0.2
0.25
0.3
I - COLLECTOR CURRENT (mA)
V - COLLECTOR-EMITTER VOLTAGE (V)
C
CESAT
25 °C
- 40 °C
125 °C
β
= 10
Typical Pulsed Current Gain
vs Collector Current
0.01 0.03 0.1 0.3 1 3 10 30 100
0
200
400
600
800
1000
1200
I - COLLECTOR CURRENT (mA)
h - TYPICAL PULSED CURRENT GAIN
C
FE
125 °C
25 °C
- 40 °C
V = 5.0 V
CE
Input and Output Capacitance
vs Reverse Bias Voltage
0 4 8 121620
0
1
2
3
4
5
REVERSE BIAS VOLTAGE (V)
CAPACITANCE (pF)
f = 1.0 MHz
C
ob
Base-Emitter Saturation
Voltage vs Collector Current
0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - COLLECTOR-EMITTER VOLTAGE (V)
C
BESAT
β
= 10
25 °C
- 40 °C
125 °C
Base-Emitter ON Voltage vs
Collector Current
0.1 1 10 40
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER ON VOLTAGE (V)
C
BEON
V = 5.0 V
CE
25 °C
- 40 °C
125 °C
Collector-Cutoff Current
vs Ambient Temperature
25 50 75 100 125 150
0.1
1
10
T - A MBIE NT TEMP ER ATURE ( C)
I - COLLECTOR CURRENT (nA)
A
CBO
°
Vcb=45v
Cte
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3 of 5

BC847BS-TP

Mfr. #:
Manufacturer:
Micro Commercial Components (MCC)
Description:
Bipolar Transistors - BJT 100mA 45V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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