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SIR474DP-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P13
www.vishay.com
4
Document Number: 68996
S-82749-Rev. A, 10-Nov-08
Vishay Siliconix
SiR474DP
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
1
0.01
0.001
0.1
10
100
T
J
= 150 °C
T
J
= 25 °C
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
- 0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
I
D
=5mA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.01
0.02
0.03
0.04
0.05
012345678 910
T
J
= 25 °C
T
J
= 125 °C
- On-Resistance (Ω)
R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0
16
32
4
8
64
80
011100.00.01
Time (s)
Power (W)
0.1
Safe Operating Area, Junction-to-Ambient
100
1
0.1 1 10 100
0.01
10
0.1
T
A
=25 °C
Single Pulse
1s
10 s
Limited byR
DS(on)
*
BVDSS Limited
1ms
10 ms
100 ms
DC
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
- Drain Current (A)
I
D
Document Number: 68996
S-82749-Rev. A, 10-Nov-08
www.vishay.com
5
Vishay Siliconix
SiR474DP
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0.0
9.2
18.4
27.6
36.8
46.0
0 255075100125150
Package Limited
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Power Derating, Junction-to-Case
0.0
7.2
14.4
21.6
28.8
36.0
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
Power Derating, Junction-to-Ambient
0.00
0.44
0.88
1.32
1.76
2.20
0 25 50 75 100 125 150
T
A
-Ambient Temperature (°C)
Power (W)
www.vishay.com
6
Document Number: 68996
S-82749-Rev. A, 10-Nov-08
Vishay Siliconix
SiR474DP
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68996.
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 70 °C/W
3. T
JM
-- T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
10
-3
10
-2
1
10
100010
-1
10
-4
100
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.1
0.01
1
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
01110
-1
10
-4
0.2
0.1
Duty Cycle = 0.5
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.05
0.02
Single Pulse
P1-P3P4-P6P7-P9P10-P12P13-P13

SIR474DP-T1-GE3

Mfr. #:
Buy SIR474DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V 20A 29.8W
Lifecycle:
New from this manufacturer.
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