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ESM3030DV

P1-P3P4-P6P7-P8
ESM3030DV
NPN DARLINGTON POWER MODULE
■ HIGH CURRENT POWER BIPOLAR MODULE
■ VERY LOW R
th
JUNCTION CASE
■ SPECIFIED ACCIDENTAL OVERLOAD
AREAS
■ ULTRAFAST FREEWHEELING DIODE
■ FULLY INSULATED PACKAGE (UL
COMPLIANT)
■ EASY TO MOUNT
■ LOW INTERNAL PARASITIC INDUCTANCE
INDUSTRIAL APPLICATIONS:
■ MOTOR CONTROL
■ SMPS & UPS
■ DC/DC & DC/AC CONVERTERS
■ WELDING EQUIPMENT
®
INTERNAL SCHEMATIC DIAGRAM
September 2003
ISOTOP
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CEV
Collector-Emitter Voltage (V
BE
= -5 V) 400 V
V
CEO(sus)
Collector-Emitter Voltage (I
B
= 0) 300 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 7 V
I
C
Collector Current 100 A
I
CM
Collector Peak Current (t
p
= 10 ms) 150 A
I
B
Base Current 5 A
I
BM
Base Peak Current (t
p
= 10 ms) 10 A
P
tot
Total Dissipation at T
c
= 25
o
C 225 W
V
isol
Insulation Withstand Voltage (RMS) from All
Four Terminals to Exernal Heatsink
2500 V
T
stg
Storage Temperature -55 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
1/8
THERMAL DATA
R
thj-case
R
thj-case
R
thc-h
Thermal Resistance Junction-case (transistor) Max
Thermal Resistance Junction-case (diode) Max
Thermal Resistance Case-heatsink With Conductive
Grease Applied Max
0.55
1.2
0.05
o
C/W
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CER
# Collector Cut-off
Current (R
BE
= 5 Ω)
V
CE
= V
CEV
V
CE
= V
CEV
T
j
= 100
o
C
1.5
16
mA
mA
I
CEV
# Collector Cut-off
Current (V
BE
= -5)
V
CE
= V
CEV
V
CE
= V
CEV
T
j
= 100
o
C
1
11
mA
mA
I
EBO
# Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V 1 mA
V
CEO(SUS)
* Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 0.2 A L = 25 mH
V
clamp
= 300 V
300 V
h
FE
∗ DC Current Gain I
C
= 85 A V
CE
= 5 V 300
V
CE(sat)
∗ Collector-Emitter
Saturation Voltage
I
C
= 60 A I
B
= 0.6 A
I
C
= 60 A I
B
= 0.6 A T
j
= 100
o
C
I
C
= 85 A I
B
= 2.4 A
I
C
= 85 A I
B
= 2.4 A T
j
= 100
o
C
1.25
1.4
1.5
1.8
1.8
2.2
V
V
V
V
V
BE(sat)
∗ Base-Emitter
Saturation Voltage
I
C
= 85 A I
B
= 2.4 A
I
C
= 85 A I
B
= 2.4 A T
j
= 100
o
C
2.4
2.5 3
V
V
di
C
/dt Rate of Rise of
On-state Collector
V
CC
= 300 V R
C
= 0 t
p
= 3 µs
I
B1
= 0.9 A T
j
= 100
o
C
330 430 A/µs
V
CE
(3
µs)••
Collector-Emitter
Dynamic Voltage
V
CC
= 300 V R
C
= 5 Ω
I
B1
= 0.9 A T
j
= 100
o
C
36V
V
CE
(5
µs)••
Collector-Emitter
Dynamic Voltage
V
CC
= 300 V R
C
= 5 Ω
I
B1
= 0.9 A T
j
= 100
o
C
2.2 4 V
t
s
t
f
t
c
Storage Time
Fall Time
Cross-over Time
I
C
= 60 A V
CC
= 50 V
V
BB
= -5 V R
BB
= 0.6 Ω
V
clamp
= 300 V I
B1
= 0.6 A
L = 0.04 mH T
j
= 100
o
C
2.3
0.35
0.8
3.5
0.6
1.2
µs
µs
µs
V
CEW
Maximum Collector
Emitter Voltage
Without Snubber
I
CWoff
= 100 A I
B1
= 2.4 A
V
BB
= -5 V V
CC
= 50 V
L = 25 µH R
BB
= 0.6 Ω
T
j
= 125
o
C
300 V
V
F
∗ Diode Forward Voltage I
F
= 85 A T
j
= 100
o
C 1.2 1.55 V
I
RM
Reverse Recovery
Current
V
CC
= 200 V I
F
= 85 A
di
F
/dt = -330 A/µs L < 50 nH
T
j
= 100
o
C
18 25 A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
# See test circuits in databook introduction
To evaluate the conduction losses of the diode use the following equations:
V
F
=1.1 + 0.0045 I
F
P = 1.1 I
F(AV)
+ 0.0045 I
2
F(RMS)
ESM3030DV
2/8
Safe Operating Areas
Derating Curve
Collector Emitter Saturation Voltage
Thermal Impedance
Collector-emitter Voltage Versus
base-emitter Resistance
Base-Emitter Saturation Voltage
ESM3030DV
3/8
P1-P3P4-P6P7-P8

ESM3030DV

Mfr. #:
Buy ESM3030DV
Manufacturer:
STMicroelectronics
Description:
Darlington Transistors NPN Darl Power Mod
Lifecycle:
New from this manufacturer.
Delivery:
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