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VBUS051CD-HD1-G-08

P1-P3P4-P6
VBUS051CD-HD1
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 08-Jun-16
1
Document Number: 81195
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Low Capacitance, Single-Line ESD-Protection Diode
MARKING (example only)
Bar = cathode marking
X = date code
Y = type code (see table below)
FEATURES
• Ultra compact LLP1006-2L package
• Low package height < 0.4 mm
• 1-line ESD-protection
• Low leakage current < 0.1 μA
• Low load capacitance CD = 0.6 pF
• ESD-protection to IEC 61000-4-2
± 15 kV contact discharge
± 15 kV air discharge
• High surge current acc. IEC 61000-4-5 I
PP
> 2 A
• Soldering can be checked by standard vision inspection.
No X-ray necessary
• Pin plating NiPdAu (e4) no whisker growth
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PATENT(S): www.vishay.com/patents
This Vishay product is protected by one or more United States and International patents.
20855
20856
2
1
21121
XY
ORDERING INFORMATION
DEVICE NAME ORDERING CODE
TAPED UNITS PER REEL
(8 MM TAPE ON 7" REEL)
MINIMUM ORDER QUANTITY
VBUS051CD-HD1 VBUS051CD-HD1-G-08 8000 8000
PACKAGE DATA
DEVICE NAME
PACKAGE
NAME
TYPE
CODE
WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE
SENSITIVITY LEVEL
SOLDERING
CONDITIONS
VBUS051CD-HD1 LLP1006-2L T 0.72 mg UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS VBUS051CD-HD1
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current Acc. IEC 61000-4-5; t
p
= 8/20 μs; single shot I
PPM
2A
Peak pulse power Acc. IEC 61000-4-5; t
p
= 8/20 μs; single shot P
PP
28 W
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
V
ESD
± 15 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 15 kV
Operating temperature Junction temperature T
J
-40 to +125 °C
Storage temperature T
STG
-40 to +150 °C
VBUS051CD-HD1
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 08-Jun-16
2
Document Number: 81195
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
APPLICATION NOTE
The VBUS051CD-HD1 is an ESD-protection device with the characteristic of a Z-diode with a high ESD-immunity and a very
low capacitance which makes it usable for high frequency applications like USB2.0 or HDMI.
With the VBUS051CD-HD1 one high speed data line can be protected against transient voltage signals like ESD (Electro Static
Discharge). Connected to the data line (pin 2) and to ground (pin 1) negative transients will be clamped close below the ground
level while positive transients will be clamped clos above the 5.5 V working range. The clamping behaviour of the
VBUS051CD-HD1 is bidirectional but asymmetrical (BiAs) and so it offers the best protection for applications running up to 5 V.
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 /150 pF)
Fig. 2 - 8/20 μs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
ELECTRICAL CHARACTERISTICS VBUS051CD-HD1
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of line which can be protected N
channel
- - 1 lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--5.5V
Reverse voltage
at I
R
= 0.1 μA
pin 2 to pin 1
V
R
5.5 - - V
Reverse current
at V
R
= V
RWM
= 5.5 V;
pin 2 to pin 1
I
R
- < 0.01 0.1 μA
Reverse breakdown voltage
at I
R
= 1 mA
pin 2 to pin 1
V
BR
6.5 7.6 8.5 V
Reverse clamping voltage
at I
PP
= 2 A; acc. IEC 61000-4-5
pin 2 to pin 1
V
C
--14V
Forward clamping voltage
at I
F
= 2 A; acc. IEC 61000-4-5
pin 1 to pin 2
V
F
--3.5V
Capacitance
at V
R
= 0 V; f = 1 MHz
pin 2 to pin 1
C
D
-0.60.8pF
0 %
20 %
40 %
60 %
80 %
100 %
120 %
-10 0 102030405060708090100
Time (ns)
Discharge Current I
ESD
Rise time = 0.7 ns to 1 ns
53 %
27 %
20557
0 %
20 %
40 %
60 %
80 %
100 %
010203040
Time (µs)
I
PPM
20 µs to 50 %
8 µs to 100 %
20548
VBUS051CD-HD1
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 08-Jun-16
3
Document Number: 81195
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Capacitance C
D
vs. Reverse Voltage V
R
Fig. 4 - Typical Forward Current I
F
vs. Forward Voltage V
F
Fig. 5 - Typical Reverse Voltage V
R
vs. Reverse Current I
R
Fig. 6 - Typical Peak Clamping Voltage V
C
vs.
Peak Pulse Current I
PP
Fig. 7 - Typical Clamping Performance at + 8 kV
Contact Discharge (acc. IEC 61000-4-2)
Fig. 8 - Typical Clamping Performance at - 8 kV
Contact Discharge (acc. IEC 61000-4-2)
V
R
(V)
C
D
(pF)
21894
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
01234
f = 1 MHz
V
F
(V)
I
F
(mA)
21895
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
10
2
1
0.4 0.6 0.8 1 1.2
I
R
(µA)
V
R
(V)
21896
0
1
2
3
4
5
6
7
8
9
0.01 0.1 1 10 100 1000 10 000
I
PP
(A)
V
C
(V)
21897
- 4
- 2
0
2
4
6
8
10
12
14
16
0123
Measured
acc. IEC 61000-4-5
(8/20 µs - wave form)
V
C
positive surge
negative surge
t (ns)
V
C-ESD
(V)
21899
- 100
- 80
- 60
- 40
- 20
0
20
- 10 0 10 20 30 40 50 60 70 80 90
acc. IEC 61000-4-2
- 8 kV
contact discharge
P1-P3P4-P6

VBUS051CD-HD1-G-08

Mfr. #:
Buy VBUS051CD-HD1-G-08
Manufacturer:
Vishay Semiconductors
Description:
TVS Diodes / ESD Suppressors ESD Prot Diode LLP1106-e4-G
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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