APTGT50DH60T1G Datasheet APTGT50DH60T1G | P1-P3

APTGT50DH60T1G

APTGT50DH60T1G – Rev 1 October, 2012

www.microsemi.com

1

–

6

Pins 3/4 must be shorted together

Absolute maximum ratings

Symbol Parameter Max ratings Unit

V

CES

Collector - Emitter Breakdown Voltage 600

V

T

C

= 25°C

80*

I

C

Continuous Collector Current

T

C

= 80°C

50*

I

CM

Pulsed Collector Current T

C

= 25°C 100

A

V

GE

Gate – Emitter Voltage ±20 V

P

D

Maximum Power Dissipation

T

C

= 25°C

176 W

RBSOA Reverse Bias Safe Operating Area

T

J

= 150°C

100A @ 550V

* Specification of IGBT device but output current must be limited to 40A to not exceed a delta of temperature greater

than 35°C for the connectors.

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

See application note

APT0502 on www.microsemi.com

Application

 Welding converters

 Switched Mode Power Supplies

 Uninterruptible Power Supplies

 Motor control

Features

 Trench + Field Stop IGBT3

Technology

- Low voltage drop

- Low tail current

- Switching frequency up to 20 kHz

- Soft recovery parallel diodes

- Low diode VF

- Low leakage current

- RBSOA and SCSOA rated

 Very low stray inductance

- Symmetrical design

 Internal thermistor for temperature monitoring

 High level of integration

Benefits

 Outstanding performance at high frequency operation

 Direct mounting to heatsink (isolated package)

 Low junction to case thermal resistance

 Solderable terminals both for power and signal for

easy PCB mounting

 Low profile

 RoHS Compliant

Asymmetrical - Bridge

Trench + Field Stop IGBT3

Power Module

V

CES

= 600V

I

C

= 50A* @ Tc = 80°C

APTGT50DH60T1G

APTGT50DH60T1G – Rev 1 October, 2012

www.microsemi.com

2

–

6

All ratings @ T

j

= 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

I

CES

Zero Gate Voltage Collector Current V

GE

= 0V, V

CE

= 600V 250 µA

T

j

= 25°C 1.5 1.9

V

CE(sat)

Collector Emitter Saturation Voltage

V

GE

=15V

I

C

= 50A

T

j

= 150°C 1.7

V

GE(th)

Gate Threshold Voltage V

GE

= V

CE

, I

C

= 600µA 5.0 5.8 6.5 V

I

GES

Gate – Emitter Leakage Current V

GE

= 20V, V

CE

= 0V 600 nA

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

C

ies

Input Capacitance 3150

C

oes

Output Capacitance 200

C

res

Reverse Transfer Capacitance

V

GE

= 0V

V

CE

= 25V

f = 1MHz

95

pF

Q

G

Gate charge

V

GE

=±15V, I

C

=50A

V

CE

=300V

0.5 µC

T

d(on)

Turn-on Delay Time 110

T

r

Rise Time 45

T

d(off)

Turn-off Delay Time 200

T

f

Fall Time

Inductive Switching (25°C)

V

GE

= ±15V

V

Bus

= 300V

I

C

= 50A

R

G

= 8.2

40

ns

T

d(on)

Turn-on Delay Time 120

T

r

Rise Time 50

T

d(off)

Turn-off Delay Time 250

T

f

Fall Time

Inductive Switching (150°C)

V

GE

= ±15V

V

Bus

= 300V

I

C

= 50A

R

G

= 8.2

60

ns

T

j

= 25°C 0.3

E

on

Turn-on Switching Energy

T

j

= 150°C 0.43

mJ

T

j

= 25°C 1.35

E

off

Turn-off Switching Energy

V

GE

= ±15V

V

Bus

= 300V

I

C

= 50A

R

G

= 8.2

T

j

= 150°C 1.75

mJ

I

sc

Short Circuit data

V

GE

≤15V ; V

Bus

= 360V

t

p

≤ 6µs ; T

j

= 150°C

250 A

Diode ratings and characteristics (CR2 & CR3)

Symbol Characteristic Test Conditions Min Typ Max Unit

V

RRM

Maximum Peak Repetitive Reverse Voltage

600 V

T

j

= 25°C 250

I

RM

Maximum Reverse Leakage Current V

R

=600V

T

j

= 150°C 500

µA

I

F

DC Forward Current

Tc = 80°C 50 A

T

j

= 25°C 1.6 2

V

F

Diode Forward Voltage

I

F

= 50A

V

GE

= 0V

T

j

= 150°C 1.5

V

T

j

= 25°C 100

t

rr

Reverse Recovery Time

T

j

= 150°C 150

ns

T

j

= 25°C 2.6

Q

rr

Reverse Recovery Charge

T

j

= 150°C 5.4

µC

T

j

= 25°C 0.6

E

r

Reverse Recovery Energy

I

F

= 50A

V

R

= 300V

di/dt =1800A/µs

T

j

= 150°C 1.2

mJ

CR1 & CR4 are IGBT protection diodes only

APTGT50DH60T1G

APTGT50DH60T1G – Rev 1 October, 2012

www.microsemi.com

3

–

6

Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

IGBT

0.85

R

thJC

Junction to Case Thermal Resistance

Diode

1.42

°C/W

V

ISOL

RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz

4000 V

T

J

Operating junction temperature range -40 175

T

STG

Storage Temperature Range -40 125

T

C

Operating Case Temperature -40 100

°C

Torque Mounting torque To heatsink M4 2 3 N.m

Wt Package Weight 80 g

Temperature sensor NTC

(see application note APT0406 on www.microsemi.com for more information).

Symbol Characteristic Min Typ Max Unit

R

25

Resistance @ 25°C 50

k

∆R

25

/R

25

5

%

B

25/85

T

25

= 298.15 K 3952

K

∆B/B T

C

=100°C 4

%





























TT

B

R

T

11

exp

25

85/25

25

SP1 Package outline

(dimensions in mm)

See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com

T: Thermistor temperature

R

T

: Thermistor value at T

APTGT50DH60T1G

APTGT50DH60T1G

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