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SFH 303FA-4 RN18A

P1-P3P4-P6P7-P7
SFH 303 FA
NPN-Silizium-Fototransistor
Silicon NPN Phototransistor
Lead (Pb) Free Product - RoHS Compliant
SFH 303 FA
2008-06-20 1
Wesentliche Merkmale
• Spektraler Bereich der Fotoempfindlichkeit:
730 nm ...1100 nm
• Gehäuse: 5 mm Radial (T1
3/4), Harz
• Besonderheit des Bauteils:
- mit Basisanschluss
- hohe Fotoempfindlichkeit
Anwendungen
• Lichtschranken
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type
Bestellnummer
Ordering Code
Fotostrom, E
e
= 0.5mW/cm
2
, λ = 950nm, V
CE
=5V
Photocurrent
Ipce (mA)
SFH 303 FA Q62702P0958 ≥ 1.0
SFH 303 FA-3/4 Q62702P3587 ≥ 1.6
Features
• Spectral Range of Sensitivity:
730 nm ... 1100 nm
• Package: 5 mm Radial (T1
3/4), Epoxy
• Feature of the device:
- with base connection
- high photosensitivity
Applications
• Photointerrupters
• Industrial electronics
• For control and drive circuits
2008-06-20 2
SFH 303 FA
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
T
op
; T
stg
– 40 …+ 100 ° C
Kollektor-Emitterspannung
Collector-emitter voltage
V
CE
35 V
Kollektorstrom
Collector current
I
C
50 mA
Kollektorspitzenstrom, τ < 10 µs
Collector surge current
I
CS
100 mA
Emitter-Basisspannung
Emitter-base voltage
V
EB
7V
Verlustleistung,
T
A
= 25 ° C
Total power dissipation
P
tot
200 mW
Wärmewiderstand
Thermal resistance
R
thJA
375 K/W
SFH 303 FA
2008-06-20 3
Kennwerte (T
A
= 25 ° C, λ = 950 nm)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
λ
Smax
990 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von S
max
Spectral range of sensitivity
S = 10% of S
max
λ 750 …1120 nm
Bestrahlungsempfindliche Fläche
Radiant sensitive area
A
0.11 mm
2
Abmessung der Chipfläche
Dimensions of chip area
L × B
L
× W
0.5 × 0.5 mm × mm
Halbwinkel
Half angle
ϕ± 20 Grad
deg.
Fotostrom der Kollektor-Basis-Fotodiode
Photocurrent of collector-base photodiode
E
e
= 0.5 mW/cm
2
, V
CB
= 5 V
V
CB
= 5 V
I
PCB
4.0 µA
Kapazität
Capacitance
V
CE
= 0 V, f = 1 MHz, E =0
V
CB
= 0 V, f = 1 MHz, E =0
V
EB
= 0 V, f = 1 MHz, E =0
C
CE
C
CB
C
EB
7.5
14
19
pF
pF
pF
Dunkelstrom
Dark current
V
CEO
= 20 V, E =0
I
CEO
1 (≤ 50) nA
Kollektor-Emitter-Sättigungsspannung
Collector-emitter saturation voltage
(threefold saturated)
V
CEsat
150 mV
P1-P3P4-P6P7-P7

SFH 303FA-4 RN18A

Mfr. #:
Buy SFH 303FA-4 RN18A
Manufacturer:
Description:
SENSOR PHOTO 990NM TOP T1 3/4
Lifecycle:
New from this manufacturer.
Delivery:
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