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MMBT2222AT-7-F

P1-P3P4-P6
MMBT2222AT
Document number: DS30268 Rev. 12 - 2
1 of 6
www.diodes.com
June 2016
© Diodes Incorporated
MMBT2222AT
K2N
YM
40V NPN SMALL SIGNAL TRANSISTOR IN SOT523
Features
BV
CEO
> 40V
I
C
= 600mA Collector Current
Epitaxial Planar Die Construction
Ultra-Small Surface Mount Package
Complementary PNP Type: MMBT2907AT
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT523
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.002 grams (Approximate)
Ordering Information (Note 4)
Product
Marking
Reel Size (inches)
Tape Width (mm)
Quantity per Reel
MMBT2222AT-7-F
1P
7
8
3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2016
2017
2018
2019
2020
2021
2022
2023
2024
2025
2026
Code
D
E
F
G
H
I
J
K
L
M
N
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Top View
Device Symbol
Pin-out Top View
C
E
B
e3
SOT523
1P = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
1P YM
MMBT2222AT
Document number: DS30268 Rev. 12 - 2
2 of 6
www.diodes.com
June 2016
© Diodes Incorporated
MMBT2222AT
Absolute Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
75
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
600
mA
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 5)
P
d
150
mW
Thermal Resistance, Junction to Ambient (Note 5)
R
JA
833
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
ESD Ratings (Note 6)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Notes: 5. For a device mounted with the collector lead on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is
measured under still air conditions whilst operating in a steady-state.
6. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Thermal Characteristics and Derating Information
MMBT2222AT
Document number: DS30268 Rev. 12 - 2
3 of 6
www.diodes.com
June 2016
© Diodes Incorporated
MMBT2222AT
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage
BV
CBO
75
V
I
C
= 10µA, I
E
= 0
Collector-Emitter Breakdown Voltage
BV
CEO
40
V
I
C
= 1mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
6
V
I
E
= 10µA, I
C
= 0
Collector Cutoff Current
I
CEX
10
nA
V
CE
= 60V, V
EB(OFF)
= 3V
Base Cutoff Current
I
BL
20
nA
V
CE
= 60V, V
EB(OFF)
= 3V
ON CHARACTERISTICS (Note 7)
DC Current Gain
h
FE
35
50
75
100
40
300
I
C
= 100A, V
CE
= 10V
I
C
= 1.0mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V
I
C
= 150mA, V
CE
= 10V
I
C
= 500mA, V
CE
= 10V
Collector-Emitter Saturation Voltage
V
CE(SAT)
0.3
1.0
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
Base-Emitter Saturation Voltage
V
BE(SAT)
0.6

1.2
2.0
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
8
pF
V
CB
= 10V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
ibo
30
pF
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Input Impedance
h
ie
0.25
1.25
kΩ
V
CE
= 10V, I
C
= 10mA,
f = 1.0MHz
Voltage Feedback Ratio
h
re
4.0
x 10
-4
Small Signal Current Gain
h
fe
75
375
Output Admittance
h
oe
25
200
µS
Current Gain-Bandwidth Product
f
T
300
MHz
V
CE
= 20V, I
C
= 20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time
t
D
10
ns
V
CC
= 30V, I
C
= 150mA,
V
BE(OFF)
= -0.5V, I
B1
= 15mA
Rise Time
t
R
25
ns
Storage Time
t
S

225
ns
V
CC
= 30V, I
C
= 150mA
I
B1
=- I
B2
= 15mA
Fall Time
t
F

60
ns
Notes: 7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
P1-P3P4-P6

MMBT2222AT-7-F

Mfr. #:
Buy MMBT2222AT-7-F
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT 40V 150mW
Lifecycle:
New from this manufacturer.
Delivery:
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