OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BCR 164T E6327

P1-P3P4-P6P7-P9P10-P10
Sep-03-2003
1
BCR164...
PNP Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R
1
= 4.7kΩ , R
2
= 10kΩ )
BCR164F/L3
BCR164T
EHA07183
3
21
C
EB
R
1
R
2
Type Marking Pin Configuration Package
BCR164F*
BCR164L3*
BCR164T*
U6s
U6
U6s
1=B
1=B
1=B
2=E
2=E
2=E
3=C
3=C
3=C
-
-
-
-
-
-
-
-
-
TSFP-3
TSLP-3-4
SC75
* Preliminary
Maximum Ratings
Parameter
Symbol Value Unit
Collector-emitter voltage V
CEO
50 V
Collector-base voltage V
CBO
50
Emitter-base voltage V
EBO
5
Input on voltage V
i(on)
15
Collector current I
C
100 mA
Total power dissipation-
BCR164F, T
S
≤ 128°C
BCR164L3, T
S
≤ 135°C
BCR164T, T
S
≤ 109°C
P
tot
250
250
250
mW
Junction temperature T
j
150 °C
Storage temperature T
st
g
-65 ... 150
Sep-03-2003
2
BCR164...
Thermal Resistance
Parameter
Symbol Value Unit
Junction - soldering point
1)
BCR164F
BCR164L3
BCR164T
R
thJS
≤ 90
≤ 60
≤ 165
-
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 100 µA, I
B
= 0
V
(BR)CEO
50 - -
V
Collector-base breakdown voltage
I
C
= 10 µA, I
E
= 0
V
(BR)CBO
50 - -
Collector-base cutoff current
V
CB
= 40 V, I
E
= 0
I
CBO
- - 100 nA
Emitter-base cutoff current
V
EB
= 10 V, I
C
= 0
I
EBO
- - 520 µA
DC current gain
2)
I
C
= 5 mA, V
CE
= 5 V
h
FE
30 - - -
Collector-emitter saturation voltage
2)
I
C
= 10 mA, I
B
= 0.5 mA
V
CEsat
- - 0.3 V
Input off voltage
I
C
= 100 µA, V
CE
= 5 V
V
i(off)
0.5 - 1.1
Input on voltage
I
C
= 2 mA, V
CE
= 0.3 V
V
i(on)
0.5 - 1.4
Input resistor R
1
3.2 4.7 6.2 kΩ
Resistor ratio R
1
/R
2
0.42 0.47 0.52 -
AC Characteristics
Transition frequency
I
C
= 10 mA, V
CE
= 5 V, f = 100 MHz
f
T
- 160 - MHz
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
C
cb
- 3 - pF
1
For calculation of
R
thJA
please refer to Application Note Thermal Resistance
2
Pulse test: t < 300µs; D < 2%
Sep-03-2003
3
BCR164...
DC current gain h
FE
= ƒ(I
C
)
V
CE
= 5 V (common emitter configuration)
10
-4
10
-3
10
-2
10
-1
A
I
C
0
10
1
10
2
10
3
10
h
FE
Collector-emitter saturation voltage
V
CEsat
= ƒ(I
C
), h
FE
= 20
0 0.1 0.2 0.3
V
0.5
V
CEsat
-3
10
-2
10
-1
10
A
I
C
Input on Voltage Vi
(on)
= ƒ(I
C
)
V
CE
= 0.3V (common emitter configuration)
10
-1
10
0
10
1
10
2
V
V
i(on)
-4
10
-3
10
-2
10
-1
10
A
I
C
Input off voltage V
i(off)
= ƒ(I
C
)
V
CE
= 5V (common emitter configuration)
0 0.5 1
V
2
V
i(off)
-6
10
-5
10
-4
10
-3
10
-2
10
A
I
C
P1-P3P4-P6P7-P9P10-P10

BCR 164T E6327

Mfr. #:
Buy BCR 164T E6327
Manufacturer:
Infineon Technologies
Description:
TRANS PREBIAS PNP 250MW SC75
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet