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MGA-725M4-BLK

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
MGA-725M4
Low Noise Ampli er with Bypass Switch
In Miniature Leadless Package
Data Sheet
Description
Broadcom's MGA -725M4 is an economical, easy-to-use
GaAs MMIC Low Noise Ampli er (LNA), which is designed
for an adaptive CDMA receiver LNA and adaptive CDMA
transmit driver ampli er.
The MGA-725M4 features a typical noise  gure of 1.4 dB
and 14.4 dB associated gain from a single stage, feedback
FET ampli er. The output is internally matched to 50Ω.
The input is optimally internally matched for lowest noise
gure into 50Ω. The input may be additionally externally
matched for low VSWR through the addition of a single
series inductor. When set into the bypass mode, both
input and output are internally matched to 50Ω.
The MGA-725M4 o ers an integrated solution of LNA
with adjustable IIP3. The IIP3 can be  xed to a desired
current level for the receiver’s linearity requirements. The
LNA has a bypass switch function, which sets the current
to zero and provides low insertion loss. The bypass mode
also boosts dynamic range when high level signal is
being received.
For the CDMA driver amplifier applications, the
MGA-725M4 provides suitable gain and linearity to meet
the ACPR requirement when the handset transmits the
highest power. When transmitting lower power, the
MGA-725M4 can be bypassed, saving the drawing current.
The MGA-725M4 is a GaAs MMIC, processed on
Broadcom's cost e ective PHEMT (Pseudomorphic High
Electron Mobility Transistor). It is housed in the MiniPak
1412 package. It is part of the Broadcom CDMAdvantage
RF chipset.
Simpli ed Schematic
Features
Operating frequency:
0.1 GHz ~ 6.0 GHz
Noise gure:
1.2 dB at 800 MHz
1.4 dB at 1900 MHz
Gain:
17.5 dB at 800 MHz
15.7 dB at 1900 MHz
Bypass switch on chip
Loss = typ 1.6 dB (I
d
< 5 µA)
IIP3 = +10 dBm
Adjustable Input IP3:
+2 to +14.7 dBm
Miniature package:
1.4 mm x 1.2 mm
2.7 V to 5.0 V operation
Applications
CDMA (IS-95, J-STD-008) Receiver LNA
Transmit Driver Amp
TDMA (IS-136) handsets
MiniPak 1.4 mm x 1.2 mm Package
Pin Connections and Package Marking
Ax
GROUND
INPUT GROUND
OUTPUT
Ax
GND
GND
Output
& V
d
Control
GainFET
Input
&
V
ref
2
MGA-725M4 Absolute Maximum Ratings
[1]
Symbol Parameter Units Absolute Operation
Maximum Maximum
V
d
Maximum Input to Output Voltage V 5.5 4.2
V
gs
Maximum Input to Ground DC Voltage V +.3 +.1
-5.5 -4.2
I
d
Supply Current mA 70 60
P
d
Power Dissipation
[1,2]
mW 300 250
P
in
CW RF Input Power dBm +20 +13
T
j
Junction Temperature °C 170 150
T
STG
Storage Temperature °C -65 to +150 -40 to +85
Thermal Resistance:
[2]
jc
= 180°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent dam-
age.
2. T
case
= 25°C.
Electrical Speci cations, T
c
= +25°C, Z
o
= 50, I
d
= 20 mA, V
d
= 3V, unless noted.
Symbol Parameter and Test Condition Units Min. Typ. Max.
V
gs
test
[1]
f = 2.0 GHz V
d
= 3.0V (V
ds
= 2.5V) I
d
= 20 mA V -0.65 -0.51 -0.37 0.035
NF test
[1]
f = 2.0 GHz V
d
= 3.0V (= V
ds
- V
gs
) I
d
= 20 mA dB 1.4 1.8 0.06
Ga test
[1]
f = 2.0 GHz V
d
= 3.0V (= V
ds
- V
gs
) I
d
= 20 mA dB 13.5 14.4 15.5 0.42
IIP3 test
[1]
f = 2.04 GHz V
d
= 3.0V (= V
ds
- V
gs
) I
d
= 20 mA dBm 8.5 9.9 0.35
IL test
[1,4]
f = 2.0 GHz V
d
= 3.0V (V
ds
= 0V, V
gs
= -3V) I
d
= 0.0 mA dB 1.6 3.5 0.07
Ig test
[1,4]
f = 2.0 GHz V
d
= 3.0V (V
ds
= 0V, V
gs
= -3V) I
d
= 0.0 mA µA 2.0 2.0
Nfo
[2]
Minimum Noise Figure f = 1.0 GHz dB 1.2
As measured in Figure 2 Test Circuit f = 1.5 GHz 1.2
(Computed from s-parameter and noise f = 2.0 GHz 1.3
parameter performance as measured in a f = 2.5 GHz 1.3
50 impedance  xture) f = 4.0 GHz 1.4
f = 6.0 GHz 1.6
Gain
[2]
Associated Gain at Nfo f = 1.0 GHz dB 17.6
As measured in Figure 2 Test Circuit f = 1.5 GHz 16.6
(Computed from s-parameter and noise f = 2.0 GHz 15.7
parameter performance as measured in a f = 2.5 GHz 14.8
50 impedance  xture) f = 4.0 GHz 12.8
f = 6.0 GHz 10.6
P1dB
[1]
Output Power at 1 dB Gain Compression I
d
= 0 mA dBm 15.2
As measured in Figure 1 Test Circuit I
d
= 5 mA 3.4
Frequency = 2.04 GHz I
d
= 10 mA 9.14
I
d
= 20 mA 13.13 0.53
I
d
= 40 mA 15.25
I
d
= 60 mA 16.16
IIP3
[1]
Input Third Order Intercept Point I
d
= 0 mA dBm 35
As measured in Figure 1 Test Circuit I
d
= 5 mA 3.1
Frequency = 2.04 GHz I
d
= 10 mA 6.6
I
d
= 20 mA 9.9 0.35
I
d
= 40 mA 13.0
I
d
= 60 mA 14.7
RLin
[1]
Input Return Loss as measured in Fig. 1 f = 2.0 GHz dB -8.2 0.41
RLout
[1]
Output Return Loss as measured in Fig. 1 f = 2.0 GHz dB -15 1.3
ISOL
[1]
Isolation |S
12
|
2
As measured in Fig. 2 f = 2.0 GHz dB -23.4 0.4
Notes:
1. Standard deviation and typical data as measured in the test circuit of Figure 1. Data based on 500 part sample size from 3 wafer lots.
2. Typical data computed from S-parameter and noise parameter data measured in a 50 system.
3. V
d
= total device voltage = V
dg
4. Bypass mode voltages shown are used in production test. For source resistor biasing, Bypass mode is set by opening the source resistor.
3
MGA-725M4 Typical Performance
Frequency = 2.0 GHz, T
c
= 25°C, Z
o
= 50, V
d
= 3V, I
d
= 20 mA unless stated otherwise. All data as measured in Figure
2 test system (input and output presented to 50).
Figure 1. MGA-725M4 Production Test Circuit.
Figure 2. MGA-725M4 50Ω Test Circuit for S, Noise, and Power Parameters.
RF
Input
V
gs
47 pF
1000 pF
1.2 nH
27 nH
27 nH
2.7 nH
1000 pF
100 pF
V
ds
RF
Output
Ax
100 pF
47 pF
RF
Input
Bias Tee
V
d
RF
Output
Ax
V
gs
Bias
Tee
ICM Fixture
0
0.5
1.0
3.0
2.5
2.0
1.5
012 34 65
NF (dB)
FREQUENCY (GHz)
Figure 3. Noise Figure vs. Frequency and Voltage.
2.7V
3.0V
3.3V
0
6
4
2
8
18
16
14
12
10
012 34 65
GAIN (dB)
FREQUENCY (GHz)
Figure 4. Gain vs. Frequency and Voltage.
2.7V
3.0V
3.3V
0
2
4
14
12
10
8
6
012 34 65
INPUT IP
3
(dBm)
FREQUENCY (GHz)
Figure 5. Input Third Order Intercept Point vs.
Frequency and Voltage.
2.7V
3.0V
3.3V
012 34 65
NF (dB)
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency and
Temperature.
-40 C
+25 C
+85 C
0
1
4
3
2
18
012 34 65
GAIN (dB)
FREQUENCY (GHz)
Figure 7. Gain vs. Frequency and Temperature.
-40 C
+25 C
+85 C
0
6
4
2
8
16
14
12
10
012 34 65
INPUT IP
3
(dBm)
FREQUENCY (GHz)
Figure 8. Input Third Order Intercept Point vs.
Frequency and Temperature.
-40 C
+25 C
+85 C
18
0
6
4
2
8
16
14
12
10
0
2
8
6
4
012 34 65
VSWR (LNA)
FREQUENCY (GHz)
Figure 9. LNA on (Switch off) VSWR vs. Frequency.
Input
Output
012 34 65
VSWR (LNA)
FREQUENCY (GHz)
Figure 10. LNA off (Switch on) VSWR vs. Frequency.
Input
Output
0
2
4
14
12
10
8
6
-5
-3
-4
0
-1
-2
012 34 65
INSERTION LOSS (dB)
FREQUENCY (GHz)
Figure 11. Insertion Loss (Switch on) vs. Frequency
and Temperature.
-40 C
+25 C
+85 C
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20

MGA-725M4-BLK

Mfr. #:
Buy MGA-725M4-BLK
Manufacturer:
Broadcom / Avago
Description:
RF Amplifier Amplifier RFIC GaAs
Lifecycle:
New from this manufacturer.
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