VUO190-16NO7
0.001 0.01 0.1 1
1000
1500
2000
2500
23456789
1
10
3
10
4
10
5
0 20406080100
0
20
40
60
80
100
0 25 50 75 100 125 150 175
1 10 100 1000 10000
0.001
0.01
0.1
1
[A
2
s]
I
FSM
[A]
t[s]
P
tot
[W]
I
dAVM
[A]
T
amb
[°C]
t[ms]
0 25 50 75 100 125 150
0
40
80
120
160
200
240
280
I
dAV
[A]
Z
thJC
[K/W]
50Hz, 80% V
RRM
T
VJ
= 150°C
0.5 1.0 1.5
0
40
80
120
160
200
240
I
F
[A]
V
F
[V]
T
VJ
= 45°C
T
VJ
= 150°C
T
VJ
= 45°C
T
VJ
=125°C
T
VJ
= 25°C
t[ms]
T
C
[°C]
R
i
t
i
0.050 0.02
0.003 0.01
0.100 0.225
0.177 0.8
0.070 0.58
T
VJ
=150°C
R
thA
:
0.2 K/W
0.4 K/W
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
DC =
1
0.5
0.4
0.33
0.17
0.08
DC =
1
0.5
0.4
0.33
0.17
0.08
0.8 x V
RRM
50 Hz
Fig. 1 Forward current vs.
voltage drop per diode
Fig. 2 Surge overload current
vs. time per diode
Fig. 3 I
2
t vs. time per diode
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
Fig. 5 Max. forward current vs.
case temperature per diode
Fig. 6 Transient thermal impedance junction to case vs. time per diode
Rectifier
IXYS reserves the right to change limits, conditions and dimensions.
20130328aData according to IEC 60747and per semiconductor unless otherwise specified
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