GTL2002 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 8 — 19 August 2013 10 of 27
NXP Semiconductors
GTL2002
2-bit bidirectional low voltage translator
12. Dynamic characteristics
12.1 Dynamic characteristics for translator-type application
[1] All typical values are measured at V
DD1
= 3.3 V, V
DD2
= 2.5 V; V
ref
= 1.5 V and T
amb
=25C.
[2] Propagation delay guaranteed by characterization.
Table 10. Dynamic characteristics for translator-type application
T
amb
=
40
C to +85
C; V
ref
= 1.365 V to 1.635 V; V
DD1
= 3.0 V to 3.6 V; V
DD2
= 2.36 V to 2.64 V;
GND = 0 V; t
r
=t
f
3.0 ns. Refer to Figure 11.
Symbol Parameter Conditions Min Typ
[1]
Max Unit
t
PLH
LOW to HIGH
propagation delay
Sn to Dn; Dn to Sn
[2]
0.5 1.5 5.5 ns
t
PHL
HIGH to LOW
propagation delay
Sn to Dn; Dn to Sn
[2]
0.5 1.5 5.5 ns
V
M
= 1.5 V; V
I
= GND to 3.0 V.
Fig 9. The input (Sn) to output (Dn) propagation delays
V
I
GND
V
DD2
t
PLH0
t
PHL0
V
M
V
M
input
test jig output
HIGH-to-LOW,
LOW-to-HIGH
V
M
V
M
V
OL
V
DD2
DUT output
HIGH-to-LOW,
LOW-to-HIGH
V
M
V
M
V
OL
002aac789
t
PHL
t
PHL1
t
PLH
t
PLH1
GTL2002 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 8 — 19 August 2013 11 of 27
NXP Semiconductors
GTL2002
2-bit bidirectional low voltage translator
12.2 Dynamic characteristics for CBT-type application
[1] This parameter is warranted by the ON-state resistance at GREF = 4.5 V, but is not directly production
tested. The propagation delay is based on the RC time constant of the typical ON-state resistance of the
switch and a load capacitance of 50 pF, when driven by an ideal voltage source (zero output impedance).
Table 11. Dynamic characteristics for CBT-type application
T
amb
=
40
C to +85
C; V
GREF
=5V
0.5 V; GND = 0 V; t
r
=t
f
3.0 ns; C
L
=50pF.
Symbol Parameter Conditions Min Typ Max Unit
t
PD
propagation delay
[1]
- - 250 ps
t
PD
= the maximum of t
PLH
or t
PHL
.
V
M
= 1.5 V; V
I
= GND to 3.0 V.
Fig 10. Input (Sn) to output (Dn) propagation delays
002aab664
3.0 V
0 V
V
OH
V
OL
t
PLH
t
PHL
1.5 V 1.5 Vinput
output
1.5 V
1.5 V
GTL2002 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 8 — 19 August 2013 12 of 27
NXP Semiconductors
GTL2002
2-bit bidirectional low voltage translator
13. Test information
Fig 11. Load circuit for translator-type applications
Test data are given in Tab le 1 2.
C
L
= load capacitance; includes jig and probe capacitance.
R
L
= load resistance.
Fig 12. Load circuit for CBT-type application
Table 12. Test data
Test Load Switch
C
L
R
L
t
PD
50 pF 500 open
GREF
SREF
DREF
S1
D1
002aac790
S2
D2
DUT
V
DD1
V
DD2
V
DD2
200 kΩ 150 kΩ 150 kΩ
V
DD2
150 kΩ
V
ref
pulse
generator
test jig
C
L
50 pF
002aab667
R
L
500 Ω
from output under test
7 V
open
GND
S1
R
L
500 Ω

GTL2002D,118

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
Translation - Voltage Levels 2-BIT GTL VOLTAGE CLAMP TRANS
Lifecycle:
New from this manufacturer.
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