IXYS reserves the right to change limits, test conditions, and dimensions.
IXGN72N60A3
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
g
fs
I
C
= 60A, V
CE
= 10V, Note 1 48 76 S
C
ies
6600 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 360 pF
C
res
80 pF
Q
g(on)
230 nC
Q
ge
I
C
= 60A, V
GE
= 15V, V
CE
= 0.5 • V
CES
40 nC
Q
gc
78 nC
t
d(on)
31 ns
t
ri
34 ns
E
on
1.38 mJ
t
d(off)
320 ns
t
fi
250 ns
E
off
3.5 mJ
t
d(on)
29 ns
t
ri
32 ns
E
on
2.6 mJ
t
d(off)
510 ns
t
fi
375 ns
E
off
6.5 mJ
R
thJC
0.35 °C/W
R
thCK
0.05 °C/W
Note: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
SOT-227B miniBLOC (IXGN)
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from data gathered during objective characterizations of preliminary engineering lots;
but also may yet contain some information supplied during a pre-production design evaluation.
IXYS reserves the right to change limits, test conditions, and dimensions without notice.
Inductive load, T
J
= 25
°°
°°
°C
I
C
= 50A, V
GE
= 15V
V
CE
= 480V, R
G
= 3Ω
Inductive load, T
J
= 125°C
I
C
= 50A, V
GE
= 15V
V
CE
= 480V, R
G
= 3Ω