DMG9926UDM-7 Datasheet DMG9926UDM-7 | P1-P3

DMG9926UDM

Document number: DS31770 Rev. 4 - 2

1 of 6

www.diodes.com

June 2009

DMG9926UDM

NEW PRODUCT

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low Gate Charge

• Low R

DS(ON)

:

• 28mΩ @V

GS

= 4.5V

• 32mΩ @V

GS

= 2.5V

• 40mΩ @V

GS

= 1.8V

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

• "Green" Device (Note 4)

Mechanical Data

• Case: SOT-26

• Case Material - Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish – Matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.008 grams (approximate)

Maximum Ratings @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Drain-Source Voltage

V

DSS

20 V

Gate-Source Voltage

V

GSS

±8

V

Drain Current (Note 1) Continuous T

A

= 25°C

T

A

= 70°C

I

D

4.2

3.2

A

Pulsed Drain Current (Note 2)

I

DM

30 A

Thermal Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Total Power Dissipation (Note 1)

P

D

0.98 W

Thermal Resistance, Junction to Ambient (Note 1) t ≤10s

R

θ

JA

128

°C /W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C

Notes: 1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s.

2. Repetitive Rating, pulse width limited by junction temperature.

3. No purposefully added lead.

4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

SOT-26

TOP VIEW

Pin Configuration

S

1

D/

1

D

2

S

2

G

1

G

2

D/

1

D

2

Equivalent Circuit

G1

S1 S2

G2

D1 D2

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DMG9926UDM

Document number: DS31770 Rev. 4 - 2

2 of 6

www.diodes.com

June 2009

DMG9926UDM

NEW PRODUCT

Electrical Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

STATIC CHARACTERISTICS

Drain-Source Breakdown Voltage

BV

DSS

20

⎯ ⎯

V

I

D

= 250μA, V

GS

= 0V

Zero Gate Voltage Drain Current

I

DSS

⎯ ⎯

1

μA

V

DS

= 20V, V

GS

= 0V

Gate-Body Leakage Current

I

GSS

⎯ ⎯

±100

nA

V

DS

= 0V, V

GS

= ±8V

Gate Threshold Voltage

V

GS

(

th

)

0.5

⎯

0.9 V

V

DS

= V

GS

, I

D

= 250μA

Static Drain-Source On-Resistance (Note 5)

R

DS (ON)

⎯

22

25

31

28

32

40

mΩ

V

GS

= 4.5V, I

D

= 8.2A

V

GS

= 2.5V, I

D

= 3.3A

V

GS

= 1.8V, I

D

= 2.0A

Forward Transfer Admittance

|Y

FS

| ⎯

7

⎯

S

V

DS

= 10V, I

D

= 4A

Diode Forward Voltage (Note 5)

V

SD

⎯

0.7 0.9 V

I

S

= 2.25A, V

GS

= 0V

DYNAMIC CHARACTERISTICS (Note 6)

Input Capacitance

C

iss

⎯

856

⎯

pF

V

DS

= 10V, V

GS

= 0V

f = 1.0MHz

Output Capacitance

C

oss

⎯

83

⎯

pF

Reverse Transfer Capacitance

C

rss

⎯

78

⎯

pF

Gate Resisitance

R

G

⎯

1.32

⎯ Ω

V

GS

= 0V, V

DS

= 0V, f = 1MHz

SWITCHING CHARACTERISTICS

Total Gate Charge

Q

g

⎯

8.3

⎯

nC

V

GS

= 4.5V, V

DS

= 10V, I

D

= 8.2A

Gate-Source Charge

Q

g

s

⎯

1.3

⎯

nC

Gate-Drain Charge

Q

g

d

⎯

3.1

⎯

nC

Turn-On Delay Time

t

D

(

on

)

⎯

8.4

⎯

ns

V

DD

= 10V, V

GS

= 4.5V,

R

L

= 10Ω, R

G

= 6Ω

Turn-On Rise Time

t

r

⎯

8.2

⎯

ns

Turn-Off Delay Time

t

D

(

off

)

⎯

40.4

⎯

ns

Turn-Off Fall Time

t

f

⎯

8.9

⎯

ns

Notes: 5. Test pulse width t = 300ms.

6. Guaranteed by design. Not subject to production testing.

0 0.4 0.8 1.2 1.6 2

0

5

10

15

20

25

30

I, D

R

AIN

C

U

R

EN

T

(A)

D

Fig. 1 Typical Output Characteristics

V , DRAIN-SOURCE VOLTAGE (V)

DS

V = 1.5V

GS

V = 2.5V

GS

V = 4.5V

GS

V = 8.0V

GS

V = 2.0V

GS

V = 3.0V

GS

0.5 1 1.5 2

Fig. 2 Typical Transfer Characteristics

V , GATE SOURCE VOLTAGE (V)

GS

0

4

8

12

16

20

I, D

R

AI

N

C

U

R

E

N

T

(A)

D

V = 5V

DS

T = -55°C

A

T = 25°C

A

T = 125°C

A

T = 150°C

A

T = 85°C

A

DMG9926UDM

Document number: DS31770 Rev. 4 - 2

3 of 6

www.diodes.com

June 2009

DMG9926UDM

NEW PRODUCT

0 5 10 15 20 25 30

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

I , DRAIN-SOURCE CURRENT (A)

D

0

0.01

0.02

0.03

0.04

0.06

R

, D

R

AI

N

-S

O

U

R

C

E

O

N

-

R

ESIS

T

A

N

C

E ( )

DS(ON)

Ω

0.05

V = 1.8V

GS

V = 4.5V

GS

V = 2.5V

GS

048121620

I , DRAIN CURRENT (A)

Fig. 4 Typical Drain-Source On-Resistance

vs. Drain Current and Temperature

D

0

0.01

0.02

0.03

0.04

0.05

R

, D

R

AIN-S

O

U

R

C

E

O

N-

R

ESIS

T

AN

C

E ( )

DS(ON)

Ω

V = 4.5V

GS

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

Fig. 5 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE (°C)

J

0.6

0.8

1.0

1.2

1.4

1.8

R

, D

R

AI

N

-S

O

U

R

C

E

ON-RESISTANCE (NORMALIZED)

DS(ON)

1.6

V = 4.5V

I = 8.2A

GS

D

V = 2.5V

I = 5A

GS

D

Fig. 6 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE (°C)

J

0

0.01

0.02

0.03

0.04

0.05

R

, D

R

AI

N

-S

O

U

R

C

E

ON-RESISTANCE ( )

DS(ON)

Ω

V = 4.5V

I = 8.2A

GS

D

V = 2.5V

I = 5A

GS

D

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

A

0

0.2

0.4

0.6

0.8

1.0

V,

G

A

T

E

T

H

R

ES

H

O

LD V

O

L

T

A

G

E (V)

GS(TH)

I = 1mA

D

I = 250µA

D

0.01

0.1

1

10

0.4 0.5 0.6 0.7 0.8 0.9 1

V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forward Voltage vs. Current

I, S

O

U

R

C

E

C

U

R

EN

T

(A)

S

T = 25°C

A

DMG9926UDM-7

DMG9926UDM-7

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