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MBRS140T3G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2014
June, 2014 − Rev. 10
1 Publication Order Number:
MBRS140T3/D
MBRS140T3G,
SBRS8140T3G
Surface Mount
Schottky Power Rectifier
Schottky Power Rectifiers employ the use of the Schottky Barrier
principle in a large area metal−to−silicon power diode.
State−of−the−art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage,
high frequency rectification, or as free wheeling and polarity
protection diodes in surface mount applications where compact size
and weight are critical to the system.
Features
• Small Compact Surface Mountable Package with J−Bend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop
(0.55 V Max @ 1.0 A, T
J
= 25°C)
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Guardring for Stress Protection
• ESD Ratings:
♦ Human Body Model = 3B (> 8000 V)
♦ Machine Model = C (> 400 V)
• SBRS8 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• All Packages are Pb−Free*
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Cathode Polarity Band
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
†
ORDERING INFORMATION
SMB
CASE 403A
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE, 40 VOLTS
MARKING DIAGRAM
B14 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MBRS140T3G SMB
(Pb−Free)
2,500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
http://onsemi.com
(Note: Microdot may be in either location)
AYWW
B14 G
G
SBRS8140T3G SMB
(Pb−Free)
2,500 /
Tape & Reel
MBRS140T3G, SBRS8140T3G
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
40 V
Average Rectified Forward Current
T
L
= 115°C
I
F(AV)
1.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
40
A
Operating Junction Temperature T
J
−65 to +125 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Value Unit
Thermal Resistance − Junction−to−Lead
(T
L
= 25°C)
R
q
JL
12
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 1)
(i
F
= 1.0 A, T
J
= 25°C)
V
F
0.6
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 100°C)
i
R
1.0
10
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
i
F
, INSTANTANEOUS FORWARD CURRENT (AMPS
)
2
0.2
0.02
1.00.1 0.2 0.3 0.4 0.5 0.6 0.7
V
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
0.8 0.9
i
F
, INSTANTANEOUS FORWARD CURRENT (AMPS
)
2
0.2
0.02
0 0.2 0.3 0.4 0.5 0.6 0.7
V
F
, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 2. Maximum Forward Voltage
0.8 0.9 1.00.0 0.1
T
C
= 125°C
T
C
= 100°C
T
C
= 25°C
T
C
= -40°C
T
C
= -55°C
T
C
= 125°C
T
C
= 100°C
T
C
= 25°C
T
C
= -40°C
T
C
= -55°C
MBRS140T3G, SBRS8140T3G
http://onsemi.com
3
I
R
, REVERSE CURRENT (mA)
100
10
1
0.1
0.01
0 4 8 1216202428323640
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
T
J
= 125°C
25°C
20
2
0.2
0.02
30
3
0.3
0.03
50
5
0.5
0.05
100°C
75°C
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
8
7
6
5
4
3
2
1
0
50 60 70 80 90 100 110 120 130
T
C
, CASE TEMPERATURE (°C)
SQUARE
WAVE
DC
T
J
= 125°C
P
F(AV)
, AVERAGE POWER DISSIPATION (WATTS)
5
4
3
2
1
0
012345
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
20
10
5
π
DC
I
PK
I
AV
=
SQUARE
WAVE
RATED VOLTAGE APPLIED
R
q
JC
= 12°C/W
T
J
= 125°C
C, CAPACITANCE (pF)
160
140
120
100
80
60
40
20
0
04 8121620242832
V
R
, REVERSE VOLTAGE (VOLTS)
36 40
180
200
4030
9
10
CAPACITANCE
LOAD
NOTE: TYPICAL CAPACITANCE
AT 0 V = 160 pF
Figure 4. Typical Capacitance
Figure 5. Current Derating (Case)
Figure 6. Power Dissipation
P1-P3P4-P4

MBRS140T3G

Mfr. #:
Buy MBRS140T3G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 1A 40V
Lifecycle:
New from this manufacturer.
Delivery:
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