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IXBH16N170

P1-P3P4-P5
© 2008 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
V
CES
T
C
= 25°C to 150°C 1700 V
V
CGR
T
J
= 25°C to 150°C, R
GE
= 1MΩ 1700 V
V
GES
Continuous ± 20 V
V
GEM
Transient ± 30 V
I
C25
T
C
= 25°C 40 A
I
C90
T
C
= 90°C 16 A
I
CM
T
C
= 25°C, 1ms 120 A
SSOA V
GE
= 15V, T
VJ
= 125°C, R
G
= 22Ω I
CM
= 40 A
(RBSOA) Clamped inductive load V
CES
≤ 1350 V
P
C
T
C
= 25°C 250 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6mm (0.062 in.) from case for 10s 300 °C
T
SOLD
Plastic body for 10 seconds 260 °C
M
d
Mounting torque (TO-247) 1.13/10 Nm/lb.in.
Weight TO-247 6 g
TO-268 4 g
DS98657B(10/08)
IXBH16N170
IXBT16N170
G = Gate C = Collector
E = Emitter TAB = Collector
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified) Min. Typ. Max.
BV
CES
I
C
= 250μA, V
GE
= 0V 1700 V
V
GE(th)
I
C
= 250μA, V
CE
= V
GE
3.0 5.5 V
I
CES
V
CE
= 0.8 • V
CES
50 μA
V
GE
= 0V T
J
= 125°C 2 mA
I
GES
V
CE
= 0V, V
GE
= ± 20V ±100 nA
V
CE(sat)
I
C
= 16A, V
GE
= 15V, Note 1 3.3 V
T
J
= 125°C 3.2 V
V
CES
= 1700V
I
C90
= 16A
V
CE(sat)
≤≤
≤≤
≤ 3.3V
TO-247 (IXBH)
G
C
E
C (TAB)
TO-268 (IXBT)
G
E
C (TAB)
High Voltage, High Gain
BIMOSFET
TM
Monolithic
Bipolar MOS Transistor
Features
z
High blocking voltage
z
International standard packages
z
Low conduction losses
Advantages
z
Low gate drive requirement
z
High power density
Applications:
z
Switched-mode and resonant-mode
power supplies
z
Uninterruptible power supplies (UPS)
z
Laser generator
z
Capacitor discharge circuit
z
AC switches
IXYS reserves the right to change limits, test conditions and dimensions.
IXBH16N170
IXBT16N170
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified) Min. Typ. Max.
g
fS
I
C
= 16A, V
CE
= 10V, Note 1 8.5 14 S
C
ies
1960 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 85 pF
C
res
24 pF
Q
g
72 nC
Q
ge
I
C
= 16A, V
GE
= 15V, V
CE
= 0.5 • V
CES
12 nC
Q
gc
25 nC
t
d(on)
38 ns
t
r
101 ns
t
d(off)
125 ns
t
f
480 ns
t
d(on)
37 ns
t
r
183 ns
t
d(off)
235 ns
t
f
705 ns
R
thJC
0.50 °C/W
R
thCS
0.25 °C/W
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
TO-247 (IXBH) Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Resistive Switching times, T
J
= 125°C
I
C
= 16A, V
GE
= 15V
V
CE
= 850V, R
G
= 22Ω
Resistive Switching times, T
J
= 25°C
I
C
= 16A, V
GE
= 15V
V
CE
= 850V, R
G
= 22Ω
Reverse Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified) Min. Typ. Max.
V
F
I
F
= 16A, V
GE
= 0V 2.6 V
t
rr
1.32 μs
I
RM
26 A
I
F
= 8A, V
GE
= 0V, -di
F
/dt = 100A/μs
V
R
= 100V, V
GE
= 0V
TO-268 (IXBT) Outline
© 2008 IXYS CORPORATION, All rights reserved
IXBH16N170
IXBT16N170
Fig. 1. Output Characteristics
@ 25ºC
0
4
8
12
16
20
24
28
32
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
9V
7V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
20
40
60
80
100
120
140
0 3 6 9 12 15 18 21 24 27 30
V
CE
- Volts
I
C
-
Amperes
V
GE
= 15V
11V
7V
13V
9V
Fig. 3. Output Characteristics
@ 125ºC
0
4
8
12
16
20
24
28
32
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
9V
7V
5V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 32A
I
C
= 16A
I
C
= 8A
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
5 6 7 8 9 101112131415
V
GE
- Volts
V
CE
- Volts
I
C
= 32A
T
J
= 25ºC
8A
16A
Fig. 6. Input Admittance
0
5
10
15
20
25
30
35
40
45
50
4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
V
GE
- Volts
I
C
-
Amperes
T
J
= - 40ºC
25ºC
125ºC
P1-P3P4-P5

IXBH16N170

Mfr. #:
Buy IXBH16N170
Manufacturer:
Littelfuse
Description:
IGBT Transistors 1700V 25A
Lifecycle:
New from this manufacturer.
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