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IRFR9310PBF

P1-P3P4-P6P7-P9P10-P11
IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
www.vishay.com
Vishay Siliconix
S13-0166-Rev. D, 04-Feb-13
1
Document Number: 91284
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
FEATURES
•P-Channel
• Surface Mount (IRFR9310, SiHFR9310)
• Straight Lead (IRFU9310, SiHFU9310)
• Advanced Process Technology
• Fast Switching
• Fully Avalanche Rated
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay utilize
advanced processing techniques to achieve low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 57 mH, R
g
= 25 , I
AS
= - 1.8 A (see fig. 12).
c. I
SD
- 1.1 A, dI/dt 450 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
V
DS
(V) - 400
R
DS(on)
()V
GS
= - 10 V 7.0
Q
g
(Max.) (nC) 13
Q
gs
(nC) 3.2
Q
gd
(nC) 5.0
Configuration Single
S
G
D
P-Channel MOSFET
DPAK
(TO-252)
IPAK
(TO-251)
G
D
S
S
D
G
D
ORDERING INFORMATION
Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)
Lead (Pb)-free and
Halogen-free
SiHFR9310-GE3 SiHFR9310TRL-GE3 SiHFR9310TR-GE3 SiHFR9310TRR-GE3 SiHFU9310-GE3
Lead (Pb)-free
IRFR9310PbF IRFR9310TRLPbF
a
IRFR9310TRPbF
a
IRFR9310TRRPbF
a
IRFU9310PbF
SiHFR9310-E3 SiHFR9310TL-E3
a
SiHFR9310T-E3
a
SiHFR9310TR-E3
a
SiHFU9310-E3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
- 400
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current V
GS
at - 10 V
T
C
= 25 °C
I
D
- 1.8
A
T
C
= 100 °C - 1.1
Pulsed Drain Current
a
I
DM
- 7.2
Linear Derating Factor 0.40
W/°C
Single Pulse Avalanche Energy
b
E
AS
92
mJ
Repetitive Avalanche Current
a
I
AR
- 1.8
A
Repetitive Avalanche Energy
a
E
AR
5.0
mJ
Maximum Power Dissipation T
C
= 25 °C P
D
50
W
Peak Diode Recovery dV/dt
c
dV/dt - 24
V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature)
d
for 10 s 300
IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
www.vishay.com
Vishay Siliconix
S13-0166-Rev. D, 04-Feb-13
2
Document Number: 91284
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. This is applied for IPAK, L
S
of DPAK is measured between lead and center of die contact.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
- - 110
°C/W
Maximum Junction-to-Ambient
(PCB Mount)
a
R
thJA
--50
Maximum Junction-to-Case (Drain) R
thJC
--2.5
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= - 250 μA - 400 - - V
V
DS
Temperature Coefficient V
DS
/T
J
Reference to 25 °C, I
D
= - 1 mA - - 0.41 - V/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= - 250 μA - 2.0 - - 4.0 V
Gate-Source Leakage I
GSS
V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= - 400 V, V
GS
= 0 V - - - 100
μA
V
DS
= - 320 V, V
GS
= 0 V, T
J
= 125 °C - - - 500
Drain-Source On-State Resistance R
DS(on)
V
GS
= - 10 V I
D
= - 1.1 A
b
--7.0
Forward Transconductance g
fs
V
DS
= - 50 V, I
D
= - 1.1 A 0.91 - - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= - 25 V,
f = 1.0 MHz, see fig. 5
- 270 -
pFOutput Capacitance C
oss
-50-
Reverse Transfer Capacitance C
rss
-8.0-
Total Gate Charge Q
g
V
GS
= - 10 V
I
D
= - 1.1 A, V
DS
= - 320 V,
see fig. 6 and 13
b
--13
nC Gate-Source Charge Q
gs
--3.2
Gate-Drain Charge Q
gd
--5.0
Turn-On Delay Time t
d(on)
V
DD
= - 200 V, I
D
= - 1.1 A,
R
g
= 21 , R
D
= 180 , see fig. 10
b
-11-
ns
Rise Time t
r
-10-
Turn-Off Delay Time t
d(off)
-25-
Fall Time t
f
-24-
Internal Drain Inductance L
D
Between lead,
6 mm (0.25") from
package and center of
die contact
c
-4.5-
nH
Internal Source Inductance L
S
-7.5-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--- 1.9
A
Pulsed Diode Forward Current
a
I
SM
--- 7.6
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= - 1.1 A, V
GS
= 0 V
b
--- 4.0V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= -1.1 A, dI/dt = 100 A/μs
b
- 170 260 ns
Body Diode Reverse Recovery Charge Q
rr
- 640 960 nC
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
D
S
G
S
D
G
IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
www.vishay.com
Vishay Siliconix
S13-0166-Rev. D, 04-Feb-13
3
Document Number: 91284
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
0.1
1
10
1 10 100
20μs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-4.5V
0.1
1
10
1 10 100
20μs PULSE WIDTH
T = 150 C
J
°
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-4.5V
0.1
1
10
4 5 6 7 8 9 10
V = -50V
20μs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
°
T = 150 C
J
°
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-10V
-1.8A
P1-P3P4-P6P7-P9P10-P11

IRFR9310PBF

Mfr. #:
Buy IRFR9310PBF
Manufacturer:
Vishay / Siliconix
Description:
MOSFET P-Chan 400V 1.8 Amp
Lifecycle:
New from this manufacturer.
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