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VS-65PQ015PBF

P1-P3P4-P6P7-P7
VS-65PQ015PbF, VS-65PQ015-N3
www.vishay.com
Vishay Semiconductors
Revision: 17-Jul-13
1
Document Number: 94246
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 65 A
FEATURES
• 125 °C T
J
operation (V
R
< 5 V)
• Single diode configuration
• Optimized for OR-ing applications
• Ultralow forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Designed and qualified according to JEDEC-JESD47
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-65PQ015... Schottky rectifier module has been
optimized for ultralow forward voltage drop specifically for
the OR-ing of parallel power supplies. The proprietary
barrier technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in parallel
switching power supplies, converters, reverse battery
protection, and redundant power subsystems.
PRODUCT SUMMARY
Package TO-247AC
I
F(AV)
65 A
V
R
15 V
V
F
at I
F
0.46 V
I
RM
max. 870 mA at 100 °C
T
J
max. 125 °C
Diode variation Single die
E
AS
9 mJ
2
13
Base cathode
Anode Anode
TO-247AC
1
2
3
Available
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 65 A
V
RRM
15 V
I
FSM
t
p
= 5 μs sine 1500 A
V
F
65 A
pk
, T
J
= 125 °C 0.46 V
T
J
Range - 55 to 125 °C
VOLTAGE RATINGS
PARAMETER SYMBOL TEST CONDITIONS VS-65PQ015PbF VS-65PQ015-N3 UNITS
Maximum DC reverse voltage V
R
T
J
= 100 °C 15 15
V
T
J
= 125 °C 5 5
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
I
F(AV)
50 % duty cycle at T
C
= 83 °C, rectangular waveform 65
A
Maximum peak one cycle
non-repetitive surge current
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
1500
10 ms sine or 6 ms rect. pulse 400
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 2 A, L = 4.5 mH 9mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
2A
VS-65PQ015PbF, VS-65PQ015-N3
www.vishay.com
Vishay Semiconductors
Revision: 17-Jul-13
2
Document Number: 94246
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Forward voltage drop V
FM
(1)
65 A
T
J
= 25 °C
0.50
V
130 A 0.71
65 A
T
J
= 125 °C
0.46
130 A 0.76
Reverse leakage current I
RM
(1)
T
J
= 125 °C V
R
= 5 V 1.2 A
T
J
= 25 °C
V
R
= Rated V
R
18
mA
T
J
= 100 °C 870
Threshold voltage V
F(TO)
T
J
= T
J
maximum
0.137 mV
Forward slope resistance r
t
4.9 m:
Maximum junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C 4300 pF
Typical series inductance L
S
Measured lead to lead 5 mm from package body 8 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
J
- 55 to 125
°C
Maximum storage temperature range T
Stg
- 55 to 150
Maximum thermal resistance,
junction to case
R
thJC
DC operation 0.8
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.3
Approximate weight
6g
0.21 oz.
Mounting torque
minimum
Non-lubricated threads
6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-247AC (JEDEC) 65PQ015
VS-65PQ015PbF, VS-65PQ015-N3
www.vishay.com
Vishay Semiconductors
Revision: 17-Jul-13
3
Document Number: 94246
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
1
100
10
1000
I
F
- Instantaneous
Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.5 1.0 1.5
2.0
0
J
J
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
1
10
100
1000
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
246
14
16
81012
0
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
1000
10 000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
64 8 10 12
16
14
2
T
J
= 25 °C
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
100 10
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
P1-P3P4-P6P7-P7

VS-65PQ015PBF

Mfr. #:
Buy VS-65PQ015PBF
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers RECOMMENDED ALT 78-VS-65PQ015-N3
Lifecycle:
New from this manufacturer.
Delivery:
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