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BSR18B Rev. A
BSR18B PNP General Purpose Amplifier
Electrical Characteristics * T
a
= 25°C unless otherwise noted
Off Characteristics
On Characteristics
Small Signal Characteristics
Switching Characteristics
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Typical Performance Characteristics
Symbol Parameter Test Condition MIN MAX Units
V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 40 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10 μA, IE = 0 40 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 5.0 V
ICBO Collector-Cutoff Current VCB = 30 V 50 nA
IEBO Emitter-Cutoff Current VCE = 30 V, VEB = 3.0 V 50 nA
hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
60
80
110
60
30
220
VCE(sat) Collector-Emitter Saturation Voltage * IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
0.25
0.4
V
V
VBE(sat) Emitter-Base Breakdown Voltage * IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
0.65 0.85
0.95
V
V
Ccb Collector-Base Capacitance VCB = 5.0 V, IE = 0, f = 100 kHz 4.5 pF
Ceb Emitter-Base Capacitance VEB = 0.5 V, IC = 0, f = 100 kHz 10 pF
td Delay Time IC = 10 mA, IB1 = 1.0 mA,Vcc= 3.0 V 35 ns
tr Rise Time 35 pF
ts Storage Time IC = 10 mA, IBon = IBoff = 1.0 mA 225 ns
tf Fall Time Vcc= 3.0 V 75 ns
