TIP42G Datasheet TIP42CG, TIP41BG, TIP41AG | P1-P3

October, 2014 − Rev. 11

1 Publication Order Number:

TIP41A/D

TIP41G, TIP41AG, TIP41BG,

TIP41CG (NPN),

TIP42G,TIP42AG, TIP42BG,

TIP42CG(PNP)

Complementary Silicon

Plastic Power Transistors

Designed for use in general purpose amplifier and switching

applications.

Features

• Epoxy Meets UL 94 V−0 @ 0.125 in

• These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage

TIP41G, TIP42G

TIP41AG, TIP42AG

TIP41BG, TIP42BG

TIP41CG, TIP42CG

V

CEO

40

60

80

100

Vdc

Collector−Base Voltage

TIP41G, TIP42G

TIP41AG, TIP42AG

TIP41BG, TIP42BG

TIP41CG, TIP42CG

V

CB

40

60

80

100

Vdc

Emitter−Base Voltage V

EB

5.0 Vdc

Collector Current − Continuous I

C

6.0 Adc

Collector Current − Peak I

CM

10 Adc

Base Current I

B

2.0 Adc

Total Power Dissipation

@ T

C

= 25°C

Derate above 25°C

P

D

65

0.52

W

W/°C

Total Power Dissipation

@ T

A

= 25°C

Derate above 25°C

P

D

2.0

0.016

W

W/°C

Unclamped Inductive Load Energy

(Note 1)

E 62.5 mJ

Operating and Storage Junction,

Temperature Range

T

J

, T

stg

– 65 to +150 °C

ESD − Human Body Model HBM 3B V

ESD − Machine Model MM C V

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. I

C

= 2.5 A, L = 20 mH, P.R.F. = 10 Hz, V

CC

= 10 V, R

BE

= 100 W.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TO−220

CASE 221A

STYLE 1

MARKING DIAGRAM

6 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

40−60−80−100 VOLTS,

65 WATTS

www.onsemi.com

1

2

3

4

TIP4xx = Device Code

xx = 1, 1A, 1B, 1C

2, 2A, 2B, 2C

A = Assembly Location

Y = Year

WW = Work Week

G=Pb−Free Package

TIP4xxG

AYWW

See detailed ordering and shipping information on page 6 of

this data sheet.

ORDERING INFORMATION

1

BASE

3

EMITTER

COLLECTOR

2,4

1

BASE

3

EMITTER

COLLECTOR

2,4

NPNPNP

TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG,

TIP42CG (PNP)

www.onsemi.com

2

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case

R

q

JC

1.67 °C/W

Thermal Resistance, Junction−to−Ambient

R

q

JA

57 °C/W

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted)

Characteristic

Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 2)

(I

C

= 30 mAdc, I

B

= 0)

TIP41G, TIP42G

TIP41AG, TIP42AG

TIP41BG, TIP42BG

TIP41CG, TIP42CG

V

CEO(sus)

40

60

80

100

−

Vdc

Collector Cutoff Current

(V

CE

= 30 Vdc, I

B

= 0)

TIP41G, TIP41AG, TIP42G, TIP42AG

(V

CE

= 60 Vdc, I

B

= 0)

TIP41BG, TIP41CG, TIP42BG, TIP42CG

I

CEO

−

0.7

mAdc

Collector Cutoff Current

(V

CE

= 40 Vdc, V

EB

= 0)

TIP41G, TIP42G

(V

CE

= 60 Vdc, V

EB

= 0)

TIP41AG, TIP42AG

(V

CE

= 80 Vdc, V

EB

= 0)

TIP41BG, TIP42BG

(V

CE

= 100 Vdc, V

EB

= 0)

TIP41CG, TIP42CG

I

CES

−

400

mAdc

Emitter Cutoff Current (V

BE

= 5.0 Vdc, I

C

= 0) I

EBO

− 1.0 mAdc

ON CHARACTERISTICS (Note 2)

DC Current Gain

(I

C

= 0.3 Adc, V

CE

= 4.0 Vdc)

(I

C

= 3.0 Adc, V

CE

= 4.0 Vdc)

h

FE

30

15

−

75

−

Collector−Emitter Saturation Voltage

(I

C

= 6.0 Adc, I

B

= 600 mAdc)

V

CE(sat)

− 1.5

Vdc

Base−Emitter On Voltage

(I

C

= 6.0 Adc, V

CE

= 4.0 Vdc)

V

BE(on)

− 2.0

Vdc

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(I

C

= 500 mAdc, V

CE

= 10 Vdc, f

test

= 1.0 MHz)

f

T

3.0 −

MHz

Small−Signal Current Gain

(I

C

= 0.5 Adc, V

CE

= 10 Vdc, f = 1.0 kHz)

h

fe

20 −

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG,

TIP42CG (PNP)

www.onsemi.com

3

Figure 1. Power Derating

T, TEMPERATURE (°C)

0 100

0

20

160

40

60

80

40 140

80

Figure 2. Switching Time Test Circuit

0.06

Figure 3. Turn−On Time

I

C

, COLLECTOR CURRENT (AMP)

0.02

0.4 6.0

0.07

1.0

4.0

T

J

= 25°C

V

CC

= 30 V

I

C

/I

B

= 10

t, TIME (s)

μ

0.5

0.3

0.1

0.05

0.1 0.6 1.0

t

d

@ V

BE(off)

≈ 5.0 V

0.03

0.7

2.0

0.2 2.0

t

r

20 120

P

D

, POWER DISSIPATION (WATTS)

T

C

T

C

0

1.0

2.0

3.0

4.0

T

A

T

A

+11 V

25 ms

0

-9.0 V

R

B

-4 V

D

1

SCOPE

V

CC

+30 V

R

C

t

r

, t

f

≤ 10 ns

DUTY CYCLE = 1.0%

R

B

and R

C

VARIED TO OBTAIN DESIRED CURRENT LEVELS

D

1

MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE I

B

≈ 100 mA

MSD6100 USED BELOW I

B

≈ 100 mA

0.2

TIP42G

TIP42G

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