ELECTRICAL CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified)
Parameter Test Conditions Symbol Device Min Typ* Max Unit
EMITTER I
F
= 1.6 mA
V
F
All
1.25 1.5 1.7
V
Forward Voltage I
F
= 1.6 mA, T
A
= 0 to 70°C 1.1 1.8
Input Reverse Current
V
R
= 5 V
I
R
All
10
µA
V
R
= 5 V, T
A
= 0 to 70°C 100
Diode Capacitance V
D
=0, f = 1MHz C
d
All 200 pF
DETECTOR
I
C
= 1 mA BV
CEO
CNW138
7
V
Collector-Emitter Breakdown Voltage
CNW139
18
Emitter-Base Breakdown Voltage I
C
= 0.1 mA BV
EBO
All
0.5 V
Logic High Output Current
I
F
= 0, V
O
= V
CC
= 7V, T
A
= 0 to 70°C
I
OH
CNW138
0.05 250
µA
I
F
= 0, V
O
= V
CC
= 18V, T
A
= 0 to 70°C
CNW139
0.1
100
Logic High Supply Current
I
F
= 0, I
O
= 0,V
CC
= 18 V, T
A
= 0 to 70°C
I
CCH
All
0.01
1µA
Logic Low Supply Current
I
F
=1.6 mA, I
O
= O,V
CC
=18 V, T
A
= 0 to 70°C
I
CCL
All 0.5 2
mA
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter Test Conditions Symbol Device Min Typ* Max Unit
TOTAL DEVICE
I
F
= 1.6 mA, V
O
= 0.4 V, V
CC
= 4.5 V, T
A
= 0 to 70°C, DC
CNW138
300
Current Transfer Ratio CTR
CNW139 500
%
I
F
= 0.5 mA, V
O
= 0.4 V, V
CC
= 4.5 V, T
A
= 0 to 70°C, DC
CNW139
400
I
F
= 1.6 mA, I
C
= 4.8 mA, V
CC
= 4.5 V, T
A
= 0 to 70°C
CNW138 0.4
Logic Low Output Voltage
I
F
= 1.6 mA, I
C
= 8 mA, V
CC
= 4.5 V, T
A
= 0 to 70°C
V
OL
0.4
V
I
F
= 5 mA, I
C
= 15 mA, V
CC
= 4.5 V, T
A
= 0 to 70°C
CNW139 0.4
I
F
= 12 mA, I
C
= 24 mA, V
CC
= 4.5 V, T
A
= 0 to 70°C
0.4
TRANSFER CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified)
www.fairchildsemi.com 2 OF 8 6/04/01 DS300400
Characteristic Test Conditions Symbol Min Typ* Max Units
Isolation Capacitance
V
I-O
= 0V, f = 1 MHz
C
ISO
0.4 0.6 pF
Isolation Resistance V
I-O
= ±500 V (DC) R
ISO
10
12
10
13
!
Input-Output Isolation Voltage
T = 1 min. (Peak value)
V
ISO
7070
V
T = 1 min. (RMS value)
5000
Maximum Operating Isolation Voltage RMS value V
IORM
1000
V
ISOLATION CHARACTERISTICS
* Typical values at T
A
= 25°C
8-PIN WIDE BODY, HIGH-GAIN
OPTOCOUPLERS
CNW138 CNW139