74HC_HCT1G66_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 19 December 2008 8 of 18
NXP Semiconductors
74HC1G66; 74HCT1G66
Single-pole single-throw analog switch
[1] All typical values are measured at T
amb
=25°C.
[2] t
pd
is the same as t
PLH
and t
PHL
.
t
en
is the same as t
PZL
and t
PZH
.
t
dis
is the same as t
PLZ
and t
PHZ
.
[3] C
PD
is used to determine the dynamic power dissipation P
D
(µW).
P
D
=C
PD
× V
CC
2
× f
i
+ Σ ((C
L
× C
SW
) × V
CC
2
× f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
C
SW
= maximum switch capacitance in pF (see Table 7);
V
CC
= supply voltage in Volt;
Σ ((C
L
× C
SW
) × V
CC
2
× f
o
) = sum of outputs.
t
dis
disable time E to Y or Z; see Figure 9
[2]
V
CC
= 2.0 V - 27 190 - 225 ns
V
CC
= 4.5 V - 16 38 - 45 ns
V
CC
= 5.0 V; C
L
=15pF - 11 - - - ns
V
CC
= 6.0 V - 14 33 - 38 ns
V
CC
= 9.0 V - 12 16 - 20 ns
C
PD
power dissipation
capacitance
V
I
= GND to V
CC
[3]
-9-- -pF
74HCT1G66
t
pd
propagation delay Y to Z or Z to Y; R
L
= ∞Ω;
see
Figure 8
[2]
V
CC
= 4.5 V - 3 15 - 18 ns
t
en
enable time E to Y or Z; see Figure 9
[2]
V
CC
= 4.5 V - 15 30 - 36 ns
V
CC
= 5.0 V; C
L
=15pF - 12 - - - ns
t
dis
disable time E to Y or Z; see Figure 9
[2]
V
CC
= 4.5 V - 13 44 - 53 ns
V
CC
= 5.0 V; C
L
=15pF - 12 - - - ns
C
PD
power dissipation
capacitance
V
I
= GND to V
CC
− 1.5 V
[3]
-9-- -pF
Table 9. Dynamic characteristics
…continued
Voltages are referenced to GND (ground = 0 V); C
L
= 50 pF; R
L
=1 k
Ω
, unless otherwise specified;
For test circuit see
Figure 10.
Symbol Parameter Conditions −40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ
[1]
Max Min Max
