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DMP4025LSD-13

P1-P3P4-P6P7-P8
DMP4025LSD
Document Number: DS35937 Rev: 2 - 2
4 of 8
www.diodes.com
April 2013
© Diodes Incorporated
ADVANCE INFORMATION
A
Product Line o
f
Diodes Incorporated
DMP4025LSD
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-40
V
I
D
= -250µA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
-1.0
µA
V
DS
= -40V, V
GS
= 0V
Gate-Source Leakage
I
GSS
100
nA
V
GS
= 20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
-0.8 -1.3 -1.8 V
I
D
= -250 µA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 12)
R
DS (ON)
18 25
mΩ
V
GS
= -10V, I
D
= -3A
30 45
V
GS
= -4.5V, I
D
= -3A
Forward Transconductance (Notes 12 & 13)
g
fs
16.6
S
V
DS
= -5V, I
D
= -3A
Diode Forward Voltage (Note 12)
V
SD
-0.7 -1.0 V
I
S
= -1A, V
GS
= 0V
DYNAMIC CHARACTERISTICS (Note 13)
Input Capacitance
C
iss
1640
pF
V
DS
= -20V, V
GS
= 0V
f = 1MHz
Output Capacitance
C
oss
179
Reverse Transfer Capacitance
C
rss
128
Gate Resistance
R
g

6.43

Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (Note 14)
Q
g

14.0

nC
V
GS
= -4.5V
V
DS
= -20V
I
D
= -3A
Total Gate Charge (Note 14)
Q
g
33.7
V
GS
= -10V
Gate-Source Charge (Note 14)
Q
gs
5.5
Gate-Drain Charge (Note 14)
Q
gd
7.3
Turn-On Delay Time (Note 14)
t
D(on)
6.9
ns
V
DD
= -20V, V
GS
= -10V
I
D
= -3A
Turn-On Rise Time (Note 14)
t
r
14.7
Turn-Off Delay Time (Note 14)
t
D(off)
53.7
Turn-Off Fall Time (Note 14)
t
f
30.9
Notes: 12. Measured under pulsed conditions. Pulse width 300µs; duty cycle 2%
13. For design aid only, not subject to production testing.
14. Switching characteristics are independent of operating junction temperatures.
Typical Characteristics
0 0.5 1 1.5 2
Fig. 1 Typical Output Characteristic
-V , DRAIN-SOURCE VOLTAGE (V)
DS
0
5
10
15
20
25
30
-I , D
R
AIN
C
U
R
R
EN
T
(A)
D
01 2 345
Fig. 2 Typical Transfer Characteristic
-V , GATE-SOURCE VOLTAGE (V)
GS
0
5
10
15
20
25
30
-I , D
R
AIN
C
U
R
R
EN
T
(A)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = -5V
DS
DMP4025LSD
Document Number: DS35937 Rev: 2 - 2
5 of 8
www.diodes.com
April 2013
© Diodes Incorporated
ADVANCE INFORMATION
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Product Line o
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Diodes Incorporated
DMP4025LSD
0 5 10 15 20 25 30
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
-I , DRAIN-SOURCE CURRENT (A)
D
0
0.01
0.02
0.03
0.04
0.05
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
V = -4.5V
GS
V = -10V
GS
0 5 10 15 20 25 30
-I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
0
0.01
0.02
0.03
0.04
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = -10V
GS
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0.5
0.7
0.9
1.1
1.3
1.5
1.
7
R
, D
R
AI
N
-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DSON
V = -10V
I = -20A
GS
D
V = -4.5V
I = -10A
GS
D
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0
0.01
0.02
0.03
0.04
0.05
0.06
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DSON
V = -10V
I = -20A
GS
D
V = -4.5V
I = -10A
GS
D
0
0.5
1.0
1.5
2.0
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
-V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
I = -250µA
D
I = -1mA
D
0.2 0.4 0.6 0.8 1.0 1.2
Fig. 8 Diode Forward Voltage vs. Current
-V , SOURCE-DRAIN VOLTAGE (V)
SD
0
2
4
6
8
10
12
14
16
18
20
-I , S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
T = 25°C
A
DMP4025LSD
Document Number: DS35937 Rev: 2 - 2
6 of 8
www.diodes.com
April 2013
© Diodes Incorporated
ADVANCE INFORMATION
A
Product Line o
f
Diodes Incorporated
DMP4025LSD
0 5 10 15 20 25 30
Fig. 9 Typical Total Capacitance
-V , DRAIN-SOURCE VOLTAGE (V)
DS
10
100
1,000
10,000
C
,
C
A
P
A
C
I
T
A
N
C
E (p
F
)
C
iss
C
rss
C
oss
0 5 10 15 20 25 30 35 40
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
-V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
10,000
-I , LEAKA
G
E
C
U
R
R
E
N
T
(nA)
DSS
1,000
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0 5 10 15 20 25 30 35 40
Fig. 11 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
0
2
4
6
8
10
-V ,
G
A
T
E-S
O
U
R
C
E V
O
L
T
A
G
E (V)
GS
V = -20V
I = -12A
DS
D
P1-P3P4-P6P7-P8

DMP4025LSD-13

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Manufacturer:
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Description:
MOSFET P-Ch Enh Mode FET 40V 25mOhm -7.6A
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