MCP111/112
DS20001889F-page 4 2004-2016 Microchip Technology Inc.
FIGURE 1-1: Timing Diagram.
AC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, all limits are specified for V
DD
= 1V to 5.5V, R
PU
= 100 k
(only MCP111), T
A
= -40°C to +125°C.
Parameters Symbol Min. Typ. Max. Units Conditions
V
DD
Detect to V
OUT
Inactive t
RPU
—90 —
µs Figure 1-1 and C
L
= 50 pF
(Note 1)
V
DD
Detect to V
OUT
Active t
RPD
—130 —
µs V
DD
ramped from V
TRIP(MAX)
+
250 mV down to V
TRIP(MIN)
–
250 mV, per Figure 1-1,
C
L
= 50 pF (Note 1)
V
OUT
Rise Time After V
OUT
Active t
RT
—5 —
µs For V
OUT
10% to 90% of final
value per Figure 1-1, C
L
= 50 pF
(Note 1)
Note 1: These parameters are for design guidance only and are not 100% tested.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all limits are specified for V
DD
= 1V to 5.5V, R
PU
= 100 k
(MCP111 only), T
A
= -40°C to +125°C.
Parameters Symbol Min. Typ. Max. Units Conditions
Temperature Ranges
Specified Temperature Range T
A
-40 — +85 °C MCP1XX-195
Specified Temperature Range T
A
-40 — +125 °C Except MCP1XX-195
Maximum Junction Temperature T
J
— — +150 °C
Storage Temperature Range T
A
-65 — +150 °C
Package Thermal Resistances
Thermal Resistance, 3L-SOT23
JA
—336 —°C/W
Thermal Resistance, 3L-SC-70
JA
—340 —°C/W
Thermal Resistance, 3L-TO-92
JA
— 131.9 — °C/W
Thermal Resistance, 3L-SOT-89
JA
—110 —°C/W
1V
1V
V
TRIP
V
DD
V
OUT
t
RPU
V
OH
t
RT
t
RPD
V
OL