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Document Number: 72625
S13-1284-Rev. C, 27-May-13
Vishay Siliconix
DG441B, DG442B
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SCHEMATIC DIAGRAM (typical channel)
SPECIFICATIONS (for single supply)
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V
V
IN
= 2.4 V, 0.8 V
e
Temp.
b
Limits
- 40 °C to 85 °C
Unit Min.
d
Typ.
c
Max.
d
Analog Switch
Analog Signal Range
e
V
ANALOG
Full 0 12 V
Drain-Source
On-Resistance
R
DS(on)
I
S
= 1 mA, V
D
= 3 V, 8 V
Room
Full
90 160
200
Dynamic Characteristics
Tur n- O n T i m e
t
ON
R
L
= 1 k, C
L
= 35 pF, V
S
= 8 V
See Figure 2
Room 120
300
ns
Turn-Off Time
t
OFF
Room
60
200
Charge Injection Q
C
L
= 1 nF, V
gen
= 6 V, R
gen
= 0
Room 4 pC
Power Supplies
Positive Supply Current I+
V
IN
= 0 V or 5 V
Room
Full
1
5
µA
Negative Supply Current I-
Room
Full
- 1
- 5
Figure 1.
IN
X
5 V Reg
Level
Shift/
Drive
V+
GND
V-
V-
V+