©2002 Fairchild Semiconductor Corporation Rev. A, October 2002
MMBT6428
Absolute Maximum Ratings*
T
C
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
Electrical Characteristics
T
C
=25°C unless otherwise noted
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 50 V
V
CBO
Collector-Base Voltage 60 V
I
C
Collector Current - Continuous 500 mA
T
J
, T
STG
Operating and Storage Junction Temperature Range - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage * I
C
= 1.0mA, I
B
= 0 50 V
V
(BR)CBO
Collector-Base BreakdownVoltage I
C
= 100µA, I
E
= 0 60 V
I
CEO
Collector Cut-off Current V
CE
= 30V, I
B
= 0 0.1 µA
I
CBO
Collector Cut-off Current V
CB
= 30V, I
E
= 0 10 nA
I
EBO
Emitter Cut-off Current V
EB
= 5.0V, I
B
= 0 10 nA
On Characteristics
h
FE
DC Current Gain V
CE
= 5.0V, I
C
= 10µA
V
CE
= 5.0V, I
C
= 100µA
V
CE
= 5.0V, I
C
= 1.0mA
V
CE
= 5.0V, I
C
= 10mA
250
250
250
250
650
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
0.2
0.6
V
V
BE
(on) Base-Emitter On Voltage V
CE
= 5.0V, I
C
= 1.0mA 0.56 0.66 V
Small Signal Characteristics
f
T
Current gain Bandwidth Product V
CE
= 5.0V, I
C
= 1.0mA,
f = 100MHz
100 700 MHz
C
obo
Output Capacitance V
CB
= 10V, I
E
= 0, f = 1.0MHz 3.0 pF
C
ibo
Input Capacitance V
EB
= 0.5V, I
C
= 0, f = 1.0MHz 8.0 pF
MMBT6428
NPN General Purpose Amplifier
• This device designed for general pupose amplifier applications at
collector currents to 300mA
• Sourced from process 10.
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
Mark: 1K
