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PBSS4160DPN,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19
PBSS4160DPN_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 11 December 2009 9 of 18
NXP Semiconductors
PBSS4160DPN
60 V, 1 A NPN/PNP low V
CEsat
(BISS) transistor
I
C
/I
B
=20
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig 9. TR1 (NPN): Base-emitter saturation voltage as
a function of collector current; typical values
Fig 10. TR1 (NPN): Collector-emitter saturation
resistance as a function of collector current;
typical values
T
amb
= 25 °CT
amb
= 25 °C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 10
Fig 11. TR1 (NPN): Collector current as a function of
collector-emitter voltage; typical values
Fig 12. TR1 (NPN): Collector-emitter saturation
resistance as a function of collector current;
typical values
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0.6
0.8
0.4
1.0
1.2
V
BEsat
(V)
0.2
I
C
(mA)
10
−1
10
4
10
3
110
2
10
(3)
(2)
(1)
006aaa515
I
C
(mA)
10
−1
10
4
10
3
110
2
10
1
10
10
2
10
3
R
CEsat
(Ω)
10
−1
(3)
(2)
(1)
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V
CE
(V)
05312 4
0.8
1.2
0.4
1.6
2.0
I
C
(A)
0
I
B
(mA) = 65.0
13.0
6.5
58.5
52.0
26.0
39.0
45.5
32.5
19.5
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I
C
(mA)
10
−1
10
4
10
3
110
2
10
1
10
10
2
10
3
R
CEsat
(Ω)
10
−1
(3)
(2)
(1)
PBSS4160DPN_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 11 December 2009 10 of 18
NXP Semiconductors
PBSS4160DPN
60 V, 1 A NPN/PNP low V
CEsat
(BISS) transistor
V
CE
= −5V
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
V
CE
= −5V
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig 13. TR2 (PNP): DC current gain as a function of
collector current; typical values
Fig 14. TR2 (PNP): Base-emitter voltage as a function
of collector current; typical values
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
T
amb
= 25 °C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 10
Fig 15. TR2 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 16. TR2 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
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200
400
600
h
FE
0
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(1)
(2)
(3)
006aaa476
−0.6
−0.4
−0.8
−1.0
V
BE
(V)
−0.2
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(1)
(2)
(3)
006aaa489
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
−10
−1
−1
V
CEsat
(V)
−10
−2
(3)
(2)
(1)
006aaa490
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
−10
−1
−1
V
CEsat
(V)
−10
−2
(3)
(2)
(1)
PBSS4160DPN_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 11 December 2009 11 of 18
NXP Semiconductors
PBSS4160DPN
60 V, 1 A NPN/PNP low V
CEsat
(BISS) transistor
I
C
/I
B
=20
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig 17. TR2 (PNP): Base-emitter saturation voltage as
a function of collector current; typical values
Fig 18. TR2 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
T
amb
= 25 °CT
amb
= 25 °C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 10
Fig 19. TR2 (PNP): Collector current as a function of
collector-emitter voltage; typical values
Fig 20. TR2 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
006aaa477
−0.5
−0.7
−0.3
−0.9
−1.1
V
BEsat
(V)
−0.1
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(1)
(2)
(3)
006aaa491
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
1
10
10
2
10
3
R
CEsat
(Ω)
10
−1
(3)
(2)
(1)
006aaa478
V
CE
(V)
0 −5−3−1 −2 −4
−0.8
−1.2
−0.4
−1.6
−2.0
I
C
(A)
0.0
I
B
(mA) = −35.0
−31.5
−28.0
−24.5
−21.0
−17.5
−14.0
−10.5
−7.0
−3.5
006aaa492
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
1
10
10
2
10
3
R
CEsat
(Ω)
10
−1
(3)
(2)
(1)
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PBSS4160DPN,115

Mfr. #:
Buy PBSS4160DPN,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT LO VCESAT(BISS)TRANS
Lifecycle:
New from this manufacturer.
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