BA779-2-G
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 25-Feb-13
1
Document Number: 83322
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RF PIN Diodes - Dual Series
FEATURES
• Wide frequency range 10 MHz to 1 GHz
• AEC-Q101 qualified
• Base P/N-HG3 - green, automotive grade
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Current controlled HF resistance in adjustable
attenuators
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.1 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
12
3
PARTS TABLE
PART ORDERING CODE TYPE MARKING
INTERNAL
CONSTRUCTION
REMARKS
BA779-2-G BA779-2-HG3-08 or BA779-2-HG3-18 PH2 Dual series Tape and reel
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PART TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
30 V
Forward continuous current I
F
50 mA
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
on PC board
50 mm x 50 mm x 1.6 mm
R
thJA
500 K/W
Junction temperatureBase P/N-HG3 -
green, automotive grade
T
j
125 °C
Storage temperature range T
stg
- 55 to + 150 °C
Operating temperature range T
op
- 55 to + 125 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 20 mA V
F
1V
Reverse current V
R
= 30 V I
R
0.05 μA
Diode capacitance f = 100 MHz, V
R
= 0 V C
D
0.5 pF
Differential forward resistance f = 100 MHz, I
F
= 1.5 mA r
f
50
Reverse impedance f = 100 MHz, V
R
= 0 V BA779-2-G z
r
5k
Minority carrier lifetime I
F
= 10 mA, I
R
= 10 mA 4μs
