ZVN4306GTA Datasheet ZVN4306GTA, ZVN4306GTC | P1-P3

ZVN4306G

Document number: DS33369 Rev. 4 - 2

1 of 5

www.diodes.com

February 2015

ZVN

4306

G

60V N-CHANNEL ENHANCEMENT MODE VERTICAL MOSFET

Features and Benefits

• V

(BR)DSS

> 60V

• R

DS(ON)

≤ 0.33Ω @ V

GS

= 10V

• Maximum Continuous Drain Current I

D

= 2.1A

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Applications

• DC-DC Converters

• Solenoids / Relay Driver for Automotive

Mechanical Data

• Case: SOT223

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish

• Weight: 0.112 grams (Approximate)

Ordering Information

(Note 4)

Part Number

Marking

Reel size (inches)

Tape width (mm)

Quantity pe

r reel

ZVN4306GTA ZVN4306 7 8 1,000

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

ZVN4306 = Product Type Marking Code

YWW = Date Code Marking

Y or Y = Last Digit of Year (ex: 5= 2015)

WW or WW = Week Code (01~53)

Equivalent Circuit

D

S

G

Pin Out - Top

Vie

w

Top View

SOT223

Green

SOT223

4306

ZVN

YWW

ZVN4306G

Document number: DS33369 Rev. 4 - 2

2 of 5

www.diodes.com

February 2015

ZVN

4306

G

Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

V

D

SS

60 V

Gate-Source Voltage

V

GSS

±20 V

Continuous Drain Current

I

D

2.1 A

Pulsed Drain Current (Note 6)

I

DM

15 A

Thermal Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 5)

T

A

=+25°C P

D

3 W

Operating and Storage Temperature Range

T

J

,

T

STG

-55 to +150 °C

Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note

7

)

Drain-Source Breakdown Voltage

BV

DSS

60 - - V

V

GS

= 0V, I

D

= 1mA

Zero Gate Voltage Drain Current T

J

= +25°C I

DSS

- -

10

100

µA

V

DS

= 60V, V

GS

= 0V

V

DS

= 48V, V

GS

= 0V, T

A

= +125°C

Gate-Source Leakage

I

GSS

- - ±20 nA

V

GS

= ±20V, V

DS

= 0V

On-State Drain Current

I

D(

ON

)

12 - - A

V

GS

= 10V, V

DS

= 10V

ON CHARACTERISTICS (Note

7

)

Gate Threshold Voltage

V

GS(

TH

)

1.3 - 3.0 V

V

DS

= V

GS

, I

D

= 1mA

Static Drain-Source On-Resistance

R

DS(ON)

-

0.22

0.32

0.33

0.45

Ω

V

GS

= 10V, I

D

= 3.0A

V

GS

= 5V, I

D

= 1.5A

Forward Transconductance

g

fs

0.7 - - S

V

DS

= 25V, I

D

= 3.0A

DYNAMIC CHARACTERISTIC

S (Note

8

)

Input Capacitance

C

iss

- - 350

pF

V

DS

= 25V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

- - 140

pF

Reverse Transfer Capacitance

C

rss

- - 30

pF

Turn-On Delay Time

t

D(

ON

)

- - 8

ns

V

DD

= 25V, I

D

= 3A, V

GEN

= 10V,

R

GS

= 50Ω

Turn-On Rise Time

t

R

- - 25

ns

Turn-Off Delay Time

t

D(

OFF

)

- - 30

ns

Turn-Off Fall Time

t

F

- - 16

ns

Notes: 5. For a device mounted on 50mm x 50mm x 1.6mm FR-4 PCB with high coverage of single sided 2oz copper, in still air condition.

6. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

ZVN4306G

Document number: DS33369 Rev. 4 - 2

3 of 5

www.diodes.com

February 2015

ZVN

4306

G

Typical Characteristics

g

fs

, Transconductance (S)

Figure 6. Gate Charge vs. Gate-source Voltage

R

DS(ON)

, Drain Source On-Resistance (

Ω

)

I

D

, Drain Current (A)

Figure 2. On-resistance vs. drain current

I

D

, Drain Current (A)

V

D

S

, Drain Source Voltage (V)

Figure 1. Saturation Characteristics

I

D

(ON)

, Drain Current (A)

Figure 4. Transconductance vs. Drain Current

Normalised R

DS(ON)

and V

GS(TH)

T

J

, Junction Temperature (°C)

Figure 3. Normalised R

DS(ON)

and V

GS(TH)

vs. Temperature

C, Capacitance (pF)

V

DS

, Drain Source Voltage (V)

Figure 5. Capacitance vs. Drain-source Voltage

V

GS

, Gate Source Voltage (V)

Q, Charge (nC)

ZVN4306GTA

ZVN4306GTA

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