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CPC3982TTR

P1-P3P4-P5
PRELIMINARY
I
NTEGRATED
C
IRCUITS
D
IVISION
PRELIMINARY
DS-CPC3982-R00C
1
CPC3982
N-Channel Depletion-Mode
Vertical DMOS FET
V
(BR)DSX
/
V
(BR)DGX
R
DS(on)
(max)
I
DSS
(min) Package
800V 380 20mA SOT-23
Applications
Features
Description
Ordering Information
Circuit Symbol
• Constant Current Regulator
• Ignition Modules
• Normally-On Switches
• Solid State Relays
• Converters
• Telecommunications
• Power Supply
• High Breakdown Voltage: 800V
• Low V
GS(off)
Voltage: -1.4V to -3.1V
• Depletion Mode Device Offers Low R
DS(on)
at Cold Temperatures
• High Input Impedance
• Small Package Size: SOT-23
The CPC3982 is an N-channel, depletion mode, field
effect transistor (FET) that utilizes IXYS Integrated
Circuits Division’s proprietary third-generation vertical
DMOS process. The third-generation process realizes
world class, high voltage MOSFET performance
in an economical silicon gate process. Our vertical
DMOS process yields a robust device, with high
input impedance, for use in high-power applications.
The CPC3982 is a highly reliable device that has
been used extensively in our Solid State Relays for
industrial and telecommunications applications.
This device excels in power applications that require
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3982 has a minimum breakdown voltage of
800V, and is available in an SOT-23 package. As with
all MOS devices, the FET structure prevents thermal
runaway and thermal-induced secondary breakdown.
Package Pinout
S
G
D
Part # Description
CPC3982TTR N-Channel Depletion Mode FET, SOT-23 Pkg.
Tape and Reel (3000/Reel)
(SOT-23)
1
2
3
SG
D
PRELIMINARY
I
NTEGRATED
C
IRCUITS
D
IVISION
PRELIMINARY
2
R00C
CPC3982
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to the
device. Functional operation of the device at conditions beyond
those indicated in the operational sections of this data sheet is
not implied.
Absolute Maximum Ratings @ 25ºC (Unless Otherwise Noted)
Electrical Characteristics @ 25ºC (Unless Otherwise Noted)
Parameter Ratings Units
Drain-to-Source Voltage 800 V
Gate-to-Source Voltage ±15 V
Pulsed Drain Current 150 mA
Total Package Dissipation
1
0.4 W
Junction Temperature 125 ºC
Operational Temperature -55 to +110 ºC
Storage Temperature -55 to +125 ºC
1
Mounted on 1"x1" 2 oz. Copper FR4 board.
Parameter Symbol Conditions Min Typ Max Units
Drain-to-Source Breakdown Voltage BV
DSX
V
GS
= -5V, I
D
=100µA 800 - - V
Gate-to-Source Off Voltage V
GS(off)
V
DS
= 15V, I
D
=1A -1.4 - -3.1 V
Change in V
GS(off)
with Temperature dV
GS(off)
/dT V
DS
= 15V, I
D
=1A - - 4.5 mV/ºC
Gate Body Leakage Current I
GSS
V
GS
=±15V, V
DS
=0V - - 100 nA
Drain-to-Source Leakage Current I
D(off)
V
GS
= -5V, V
DS
=800V - - 1 µA
Saturated Drain-to-Source Current I
DSS
V
GS
= 0V, V
DS
=15V 20 - - mA
Static Drain-to-Source On-State Resistance R
DS(on)
V
GS
= 0V, I
D
=20mA, V
DS
=10V
- - 380
Change in R
DS(on)
with Temperature dR
DS(on)
/dT - - 2.5 %/ºC
Forward Transconductance G
FS
I
D
= 10mA, V
DS
= 10V 15 - - m
Input Capacitance C
ISS
V
GS
= -3.5V
V
DS
= 25V
f= 1MHz
-
20
-pF
Common Source Output Capacitance C
OSS
2.2
Reverse Transfer Capacitance C
RSS
13
Source-Drain Diode Voltage Drop V
SD
V
GS
= -5V, I
SD
=5mA - 0.6 1 V
Thermal Resistance, Junction to Ambient
JA
- - 250 - ºC/W
PRELIMINARY
I
NTEGRATED
C
IRCUITS
D
IVISION
CPC3982
PRELIMINARY
3
R00C
*The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifi cations, please
contact our application department.
PERFORMANCE DATA @25ºC (Unless Otherwise Noted)*
V
GS
(V)
-2.5 -2.0 -1.5 -1.0 -0.5
I
D
(mA)
0
5
10
15
20
25
Input Admittance
(V
DS
=10V)
I
D
(mA)
0 5 10 15 20
g
m
(mS)
0
10
20
30
40
50
60
Transconductance vs. Drain Current
(V
DS
=10V)
V
DS
(V)
024681012
I
D
(mA)
0
5
10
15
20
25
30
Output Characteristics
V
GS
= 0V
V
GS
= -1V
V
GS
= -1.2V
V
GS
= -1.4V
V
GS
= -1.6V
I
D
(mA)
0 5 10 15 20 25 30
On-Resistance (:)
240
260
280
300
320
340
360
On-Resistance vs. Drain Current
(V
GS
=0V)
V
DS
(V)
0 5 10 15 20 25 30
Capacitance (pF)
1
10
100
Capacitance vs. Drain-Source Voltage
(V
GS
= -3.5V)
C
RSS
C
ISS
C
OSS
P1-P3P4-P5

CPC3982TTR

Mfr. #:
Buy CPC3982TTR
Manufacturer:
IXYS Integrated Circuits
Description:
MOSFET N-Ch Depletion Mode Vertical DMOS FET
Lifecycle:
New from this manufacturer.
Delivery:
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