© Semiconductor Components Industries, LLC, 2009
March, 2009 − Rev. 3
1 Publication Order Number:
NTMFS4837NH/D
NTMFS4837NH
Power MOSFET
30 V, 75 A, Single N−Channel, SO−8 FL
Features
• Low R
DS(on)
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• Low R
G
• These are Pb−Free Devices*
Applications
• Refer to Application Note AND8195/D
• CPU Power Delivery
• DC−DC Converters and Low Side Switching
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25°C
T
A
= 85°C
I
D
16
11.5
A
Power Dissipation
R
q
JA
(Note 1)
T
A
= 25°C
T
A
= 85°C
P
D
2.2
1.15
W
Continuous Drain
Current R
q
JA
v10 s
T
A
= 25°C
T
A
= 85°C
I
D
26
18.8
A
Power Dissipation
R
q
JA
v10 s
T
A
= 25°C
T
A
= 85°C
P
D
5.8
3
W
Continuous Drain
Current R
q
JA
(Note 2)
T
A
= 25°C
T
A
= 85°C
I
D
10.2
7.3
A
Power Dissipation
R
q
JA
(Note 2)
T
A
= 25°C
T
A
= 85°C
P
D
0.88
0.46
W
Continuous Drain
Current R
q
JC
(Note 1)
T
C
= 25°C
T
C
= 85°C
I
D
75
54
A
Power Dissipation
R
q
JC
(Note 1)
T
C
= 25°C
T
C
= 85°C
P
D
48
25
W
Pulsed Drain
Current
t
p
=10 ms
T
A
= 25°C I
DM
225 A
Operating Junction and Storage Temperature T
J
,
T
STG
−55 to
+150
°C
Source Current (Body Diode) I
S
40 A
Drain to Source dV/dt dV/dt 6 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 30 V, V
GS
= 10 V, I
L
= 31 A,
L = 0.3 mH, R
G
= 25 W)
EAS 144 mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
http://onsemi.com
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
4837NH
AYWWG
G
1
V
(BR)DSS
R
DS(ON)
MAX I
D
MAX
30 V
5.0 mW @ 10 V
75 A
8.0 mW @ 4.5 V
G (4)
S (1,2,3)
N−CHANNEL MOSFET
D (5,6)
Device Package Shipping
†
ORDERING INFORMATION
NTMFS4837NHT1G SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4837NHT3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
S
S
S
G
D
D
D
D
(Note: Microdot may be in either location)
*For additional information on our Pb−Free strategy and
soldering details, please download the ON Semicon-
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
