NTMFS4837NHT3G

NTMFS4837NH
http://onsemi.com
4
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
012345
Figure 1. OnRegion Characteristics
V
DS
, DRAINTOSOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
V
GS
= 3.2 V
3.8 V
4.0 V
4.2 V
4.4 V to 5.0 V
3.6 V
3.4 V
T
J
= 25°C
7 V to 10 V
0
10
20
30
40
50
60
70
80
1234567
I
D
, DRAIN CURRENT (A)
V
GS
, GATETOSOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
T
J
= 25°C
T
J
= 55°C
T
J
= 125°C
0.003
0.004
0.005
0.006
0.007
0.008
0.009
0.010
0.011
0.012
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 11
R
DS(on)
, DRAINTOSOURCE RESISTANCE (W)
V
GS
, GATETOSOURCE VOLTAGE (V)
Figure 3. OnResistance versus
GatetoSource Voltage
I
D
= 30 A
T
J
= 25°C
0.001
0.0015
0.002
0.0025
0.003
0.0035
0.004
0.0045
0.005
0.0055
0.006
0.0065
0.007
0.0075
0.008
0.0085
0.009
0.0095
0.01
10 15 20 25 30 35 40 45 50
V
GS
= 11.5 V
V
GS
= 4.5 V
I
D
, DRAIN CURRENT (A)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
R
DS(on)
, DRAINTOSOURCE RESISTANCE (W)
0.6
0.8
1.0
1.2
1.4
1.6
50 30 10 0 20 40 60 80 100 120 160
Figure 5. OnResistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
R
DS(on)
, DRAINTOSOURCE RESISTANCE
(NORMALIZED)
I
D
= 30 A
V
GS
= 10 V
0.1
1
10
100
1000
10000
5 1015202530
Figure 6. DraintoSource Leakage Current
versus Voltage
V
DS
, DRAINTOSOURCE VOLTAGE (V)
I
DSS
, LEAKAGE (nA)
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
T
J
= 25°C
55 60 65 70 75 80 85
T
J
= 25°C
0.7
0.9
1.1
1.3
1.5
1.7
90
100
140
NTMFS4837NH
http://onsemi.com
5
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
15 10 50 5 10152025
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
C, CAPACITANCE (pF)
C
ISS
C
OSS
T
J
= 25°C
C
RSS
0
1.5
3
4.5
6
7.5
9
10.5
12
0 5 10 15 20 25 30 35
V
DD
= 15 V
V
GS
= 11.5 V
I
D
= 30 A
T
J
= 25°C
Q
T
Q
g
, TOTAL GATE CHARGE (nC)
V
GS,
GATETOSOURCE VOLTAGE (V)
Figure 8. GatetoSource and DraintoSource
Voltage vs. Total Gate Charge
1
10
100
1 10 100
t
r
t
d(off)
t
d(on)
t
f
V
DS
= 15 V
I
D
= 15 A
V
GS
= 11.5 V
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
R
G
, GATE RESISTANCE (W)
t, TIME (ns)
0
5
10
15
20
25
30
0.5 0.6 0.7 0.8 0.9 1.0
Figure 10. Diode Forward Voltage versus
Current
V
SD
, SOURCETODRAIN VOLTAGE (V)
I
S
, SOURCE CURRENT (A)
T
J
= 25°C
V
GS
= 0 V
1
10
100
1000
0.1 1 10 100
100 ms
1 ms
10 ms
dc
R
DS(on)
Limit
Thermal Limit
Package Limit
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAINTOSOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
V
GS
= 20 V
Single Pulse
T
C
= 25°C
10 ms
0
10
20
30
40
50
60
70
80
90
100
110
25 50 75 100 125 150 175
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
T
J
, STARTING JUNCTION TEMPERATURE (°C)
EAS, SINGLE PULSE DRAINTOSOURCE
AVALANCHE ENERGY (mJ)
I
D
= 31 A
2600
2800
3000
Q
GS
Q
GD
120
130
140
150
NTMFS4837NH
http://onsemi.com
6
0
20
40
60
100
120
0 20406080100
V
DS
= 1.5 V
DRAIN CURRENT (A)
g
FS,
(S)
Figure 13. G
FS
versus Drain Current
12010 30 50 70 90 110
80

NTMFS4837NHT3G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 30V 10.2A SO-8FL
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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