© Semiconductor Components Industries, LLC, 2006
June, 2006 − Rev. 4
1 Publication Order Number:
NTLJF4156N/D
NTLJF4156N
Power MOSFET and
Schottky Diode
30 V, 4.6 A, mCool] N−Channel, with
2.0 A Schottky Barrier Diode, 2x2 mm
WDFN Package
Features
• WDFN Package Provides Exposed Drain Pad for Excellent Thermal
Conduction
• Co−Packaged MOSFET and Schottky For Easy Circuit Layout
• R
DS(on)
Rated at Low V
GS(on)
Levels, V
GS
= 1.5 V
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
• Low VF Schottky
• This is a Pb−Free Device
Applications
• DC−DC Converters
• Li−Ion Battery Applications in Cell Phones, PDA’s, Media Players
• Color Display and Camera Flash Regulators
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
±8.0 V
Continuous Drain
Current (Note 1)
Steady
State
T
J
= 25°C
I
D
3.7
A
T
J
= 85°C 2.7
t ≤ 5 s T
J
= 25°C 4.6
Power Dissipation
(Note 1)
Steady
State
T
J
= 25°C
P
D
1.5
W
t ≤ 5 s 2.3
Continuous Drain
Current (Note 2)
Steady
State
T
J
= 25°C
I
D
2.5
A
T
J
= 85°C 1.8
Power Dissipation
(Note 2)
T
J
= 25°C
P
D
0.71
Pulsed Drain Current
t
p
= 10 ms
I
DM
20 A
Operating Junction and Storage Temperature T
J
, T
STG
−55 to
150
°C
Source Current (Body Diode) (Note 2) I
S
2.4 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
of 30 mm
2
, 2 oz. Cu.
1
2
3
6
5
4
A
N/C
D
K
G
S
http://onsemi.com
30 V
30 V
90 mW @ 2.5 V
70 mW @ 4.5 V
2.0 A
R
DS(on)
MAX
4.6 A
0.47 V
I
D
MAX (Note 1)V
(BR)DSS
MOSFET
SCHOTTKY DIODE
V
R
MAX I
F
MAXV
F
TYP
125 mW @ 1.8 V
250 mW @ 1.5 V
G
S
N−CHANNEL MOSFET
D
K
A
SCHOTTKY DIODE
JL = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
JLMG
G
1
2
3
6
5
4
WDFN6
CASE 506AN
MARKING
DIAGRAM
(Top View)
1
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
PIN CONNECTIONS
K
D
