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SI8812DB-T2-E1

P1-P3P4-P6P7-P8
Si8812DB
www.vishay.com
Vishay Siliconix
S16-0758-Rev. C, 02-May-16
1
Document Number: 63682
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 20 V (D-S) MOSFET
Marking Code: xx = AG
xxx = Date/Lot traceability code
Ordering Information:
Si8812DB-T2-E1 (lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET
®
power MOSFET
• Small 0.8 mm x 0.8 mm outline area
• Low 0.4 mm max. profile
• Low On-resistance
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Load switch with low voltage drop
• Power management
• For smart phones, tablet PCs,
mobile computing
Notes
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC/JEDEC
®
(J-STD-020), no manual or hand soldering.
d. Maximum under steady state conditions is 185 °C/W.
e. Maximum under steady state conditions is 330 °C/W.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
() MAX. I
D
(A)
a
Q
g
(TYP.)
20
0.060 at V
GS
= 4.5 V 3.2
6.3 nC
0.062 at V
GS
= 3.7 V 3.1
0.071 at V
GS
= 2.5 V 3.0
0.093 at V
GS
= 1.8 V 2.7
MICRO FOOT
®
0.8 x 0.8
Backside View
1
0.8 mm
0.8 mm
xxx
xx
Bump Side View
1
G
4
D
S
3
S
2
1
G
4
S
3
2
D
S
G
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
20
V
Gate-Source Voltage V
GS
± 8
Continuous Drain Current (T
J
= 150 °C)
T
A
= 25 °C
I
D
3.2
a
A
T
A
= 70 °C 2.6
a
T
A
= 25 °C 2.3
b
T
A
= 70 °C 1.8
b
Pulsed Drain Current (t = 300 μs) I
DM
20
Continuous Source-Drain Diode Current
T
A
= 25 °C
I
S
0.7
a
T
A
= 25 °C 0.4
b
Maximum Power Dissipation
T
A
= 25 °C
P
D
0.9
a
W
T
A
= 70 °C 0.6
a
T
A
= 25 °C 0.5
b
T
A
= 70 °C 0.3
b
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +150
°C
Soldering Recommendations (Peak Temperature)
c
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum Junction-to-Ambient
a, d
t 5 s R
thJA
105 135
°C/W
Maximum Junction-to-Ambient
b, e
200 260
Si8812DB
www.vishay.com
Vishay Siliconix
S16-0758-Rev. C, 02-May-16
2
Document Number: 63682
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 20 - - V
V
DS
Temperature Coefficient V
DS
/T
J
I
D
= 250 μA
-29-
mV/°C
V
GS(th)
Temperature Coefficient V
GS(th)
/T
J
--2.6-
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 0.4 - 1 V
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 8 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 20 V, V
GS
= 0 V - - 1
μA
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C - - 10
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 4.5 V 10 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 4.5 V, I
D
= 1 A - 0.048 0.060
V
GS
= 3.7 V, I
D
= 1 A - 0.049 0.062
V
GS
= 2.5 V, I
D
= 1 A - 0.052 0.071
V
GS
= 1.8 V, I
D
= 0.5 A - 0.060 0.093
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 1 A - 12 - S
Dynamic
b
Total Gate Charge Q
g
V
DS
= 10 V, V
GS
= 8 V, I
D
= 1 A - 11 17
nC
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 1 A
-6.310
Gate-Source Charge Q
gs
-0.8-
Gate-Drain Charge Q
gd
-1.4-
Gate Resistance R
g
f = 1 MHz - 6 -
Turn-On Delay Time t
d(on)
V
DD
= 10 V, R
L
= 10
I
D
1 A, V
GEN
= 4.5 V, R
g
= 1
-1020
ns
Rise Time t
r
-1325
Turn-Off Delay Time t
d(off)
-3360
Fall Time t
f
-1020
Turn-On Delay Time t
d(on)
V
DD
= 10 V, R
L
= 10
I
D
1 A, V
GEN
= 8 V, R
g
= 1
-510
Rise Time t
r
-1120
Turn-Off Delay Time t
d(off)
-2550
Fall Time t
f
-1020
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
T
A
= 25 °C - - 0.7
A
Pulse Diode Forward Current I
SM
--20
Body Diode Voltage V
SD
I
S
= 1 A, V
GS
= 0 V - 0.8 1.2 V
Body Diode Reverse Recovery Time t
rr
I
F
= 1 A, di/dt = 100 A/μs, T
J
= 25 °C
-1020ns
Body Diode Reverse Recovery Charge Q
rr
-310nC
Reverse Recovery Fall Time t
a
-6-
ns
Reverse Recovery Rise Time t
b
-4-
Si8812DB
www.vishay.com
Vishay Siliconix
S16-0758-Rev. C, 02-May-16
3
Document Number: 63682
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0.02
0.05
0.08
0.11
0.14
0 4 8 12 16 20
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 3.7 V
V
GS
= 1.8 V
V
GS
= 2.5 V
0
2
4
6
8
0 2 4 6 8 10 12
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
= 16 V
V
DS
= 5 V
V
DS
= 10 V
I
D
= 1 A
0
2
4
6
8
10
0.0 0.4 0.8 1.2 1.6 2.0
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
0
200
400
600
800
0 4 8 12 16 20
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
- 50 - 25 0 25 50 75 100 125 150
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
V
GS
= 4.5 V, 3.7 V
I
D
= 1 A
V
GS
= 2.5 V, 1.8 V
P1-P3P4-P6P7-P8

SI8812DB-T2-E1

Mfr. #:
Buy SI8812DB-T2-E1
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8
Lifecycle:
New from this manufacturer.
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