FDS7760A

January 2002
2002 Fairchild Semiconductor Corporation
FDS7760A Rev D (W)
FDS7760A
N-Channel Logic Level PowerTrench
®
MOSFET
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Applications
DC/DC converter
Load switch
Motor drives
Features
15 A, 30 V. R
DS(ON)
= 5.5 m @ V
GS
= 10 V
R
DS(ON)
= 8 m @ V
GS
= 4.5 V.
Low gate charge (37nC typical)
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
High power and current handling capability.
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 30 V
V
GSS
Gate-Source Voltage
±20
V
I
D
Drain Current Continuous (Note 1a) 15 A
Pulsed 60
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
1.2
P
D
(Note 1c)
1
W
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 50
°C/W
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1c) 50 (10 sec)
°C/W
R
θJC
Thermal Resistance, Junction-to-Case (Note 1) 30
°C/W
Package Outlines and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
FDS7760A FDS7760A 13’’ 12mm 2500 units
FDS7760A
FDS7760A Rev D (W)
DMOS Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol
Parameter Test Conditions Min Typ
Max
Units
Drain-Source Avalanche Ratings (Note 2)
W
DSS
Single Pulse Drain-Source
Avalanche Energy
V
DD
= 15 V, I
D
= 15 A 360 mJ
I
AR
Maximum Drain-Source Avalanche
Current
15 A
Off Characteristics
BV
DSS
DrainSource Breakdown Voltage
V
GS
= 0 V, I
D
= 250 µA
30 V
BVDSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 µA, Referenced to 25°C
24
mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 24 V, V
GS
= 0 V 1
µA
I
GSSF
GateBody Leakage, Forward V
GS
= 20 V, V
DS
= 0 V 100 nA
I
GSSR
GateBody Leakage, Reverse V
GS
= 20 V V
DS
= 0 V 100 nA
On Characteristics (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 µA
1 1.6 3 V
VGS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250 µA, Referenced to 25°C
-5
mV/°C
R
DS(on)
Static DrainSource
OnResistance
V
GS
= 10 V, I
D
= 15 A
V
GS
= 10 V, I
D
= 15 A, T
J
= 125°C
V
GS
= 4.5 V, I
D
= 13 A
4.5
7
6
5.5
8
8
m
I
D(on)
OnState Drain Current V
GS
= 10 V, V
DS
= 5 V 50 A
g
FS
Forward Transconductance V
DS
= 10 V, I
D
= 15 A 65 S
Dynamic Characteristics
C
iss
Input Capacitance 3514 pF
C
oss
Output Capacitance 1123 pF
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
307 pF
Switching Characteristics (Note 2)
t
d(on)
TurnOn Delay Time 13 20 ns
t
r
TurnOn Rise Time 12 19 ns
t
d(off)
TurnOff Delay Time 78 125 ns
t
f
TurnOff Fall Time
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
32 51 ns
Q
g
Total Gate Charge 37 55 nC
Q
gs
GateSource Charge 10 nC
Q
gd
GateDrain Charge
V
DS
= 15 V, I
D
= 15 A,
V
GS
= 5 V
12 nC
DrainSource Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous DrainSource Diode Forward Current 2.1 A
V
SD
DrainSource Diode Forward
Voltage
V
GS
= 0 V, I
S
= 2.1 A (Note 2) 0.7 1.2 V
Notes:
1. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 50°/W when
mounted on a 1in
2
pad of 2 oz copper
b) 105°/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125°/W when mounted on a
minimum pad.
2. Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS7760A
FDS7760A Rev D (W)
0
10
20
30
40
50
60
0 0.5 1 1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
3.0V
5.0
2.5V
4.0V
3.5V
V
GS
= 10V
0.8
1
1.2
1.4
1.6
1.8
2
0 10 20 30 40 50 60
I
D
, DRAIN CURRENT (A)
R
V
GS
= 4.0V
6.0V
5.0V
7.0V
10V
4.5V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
I
D
= 9A
V
GS
= 10V
0
0.005
0.01
0.015
0.02
2 4 6 8 10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 7.5 A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
60
70
80
1 1.5 2 2.5 3 3.5 4
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
Typical Characteristics
FDS7760A

FDS7760A

Mfr. #:
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET N-Ch Logic Level
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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