N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 1 – MARCH 94
FEATURES
* 240 Volt V
DS
*R
DS(on)
=16Ω
APPLICATIONS
* Telephone handsets
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
240 V
Continuous Drain Current at T
amb
=25°C I
D
160 mA
Pulsed Drain Current I
DM
2A
Gate Source Voltage V
GS
± 20
V
Power Dissipation at T
amb
=25°C P
tot
700 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
240 V I
D
=1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
1 3 V ID=1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
20 nA
V
GS
=± 20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
10
100
µA
µA
V
DS
=240 V, V
GS
=0
V
DS
=192 V, V
GS
=0V,
T=125°C
(2)
On-State Drain Current(1) I
D(on)
500 mA V
DS
=25 V, V
GS
=10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
16
Ω
V
GS
=10V,I
D
=250mA
Forward Transconductance
(1)(2)
g
fs
100 mS V
DS
=25V,I
D
=250mA
Input Capacitance (2) C
iss
85 pF
Common Source Output
Capacitance (2)
C
oss
20 pF V
DS
=25 V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
7pF
Turn-On Delay Time (2)(3) t
d(on)
7ns
V
DD
≈25V, I
D
=250mA
Rise Time (2)(3) t
r
8ns
Turn-Off Delay Time (2)(3) t
d(off)
16 ns
Fall Time (2)(3) t
f
8ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
(
3
E-Line
TO92 Compatible
3-350
TYPICAL CHARACTERISTICS
Output Characteristics
VDS-Drain Source Voltage (Volts)
I
D(O
N
)
On
Sta
te
D
r
a
i
n
C
u
r
r
en
t(
Am
ps)
1.4
1.2
1.0
0.6
0.2
0
0.4
0.8
1.6
1.8
Transfer Characteristics
Normalised R
DS(on)
and V
GS(th)
V Temperature
Temperature (°C)
No
r
mal
ise
d
R
DS(on)
and V
G
S(t
h)
0 -60 -40 -20 0 20 40 60 80
100
120 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.4
0.8
Dr
a
in
-S
ourc
e
R
e
s
i
s
t
an
c
e
R
D
S(
on)
G
ate
T
h
res
h
o
l
d
V
o
l
tage
V
GS
(
th
)
ID=0.25A
0246810
1.0
0.8
0.6
0.4
0
0.2
020406080100
80
µ
s pulse
2.0
Saturation Characteristics
VDS-Drain Source Voltage (Volts)
On-resistance vs gate-source voltage
VGS-Gate Source Voltage (Volts)
02 46810
14
12
10
6
2
0
4
8
16
18
20
V
DS-
Drain Source
(Volts)
R
DS(ON)
-Drain Source Resistance
(
Ω
)
Voltage Saturation Characteristics
VGS-Gate Source Voltage (Volts)
1.4
1.2
1.0
0.6
0.2
0
0.4
0.8
1.6
1.8
02 4 6 8 10
2.0
VGS=10V
8V
6V
5V
4V
3V
2V
VGS=10V
7V
5V
4V
3V
2V
ID=
1A
500mA
100mA
VDS=25V
VDS=10V
I
D(
o
n
)
-
On
-
Sta
te
D
r
a
i
n
C
u
r
r
en
t (
Amps
)
I
D(
O
N)
-
On-
St
a
te Dr
ain
Cu
r
r
e
nt
(
Amps)
VGS-Gate Source Voltage (Volts)
VGS=10V
ID=1mA
VGS=VDS
1
110
100
10
20
ID=
1A
500mA
I00mA
ZVN0124A
ZVN0124A
3-351
