Characteristics STPS3L45AF
2/8 DocID024949 Rev 2
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.36 x I
F(AV)
+ 0.05 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol Parameter Test conditions Value Unit
V
RRM
Repetitive peak reverse voltage 45 V
I
F(AV)
Average forward current T
L
= 120 °C δ = 0.5 3 A
I
FSM
Surge non repetitive forward
current
t
p
= 10 ms sinusoidal 75 A
P
ARM
(1)
1. For pulse time duration deratings, please refer to Figure 4. More details regarding the avalanche energy
measurements and diode validation in the avalanche are provided in the STMicroelectronics Application
notes AN1768, “Admissible avalanche power of Schottky diodes” and AN2025, “Converter improvement
using Schottky rectifier avalanche specification”.
Repetitive peak avalanche power t
p
= 10 µs Tj = 125 °C 70 W
V
ARM
(2)
2. Refer to Figure 11
Maximum repetitive peak
avalanche voltage
t
p
< 10 µs, Tj < 125 °C, I
AR
< 1.4 A 50 V
V
ASM
(2)
Maximum single pulse peak
avalanche voltage
t
p
< 10 µs, Tj < 125 °C, I
AR
< 1.4 A 50 V
T
stg
Storage temperature range -65 to + 175 °C
T
j
Operating junction temperature
(3)
3. condition to avoid thermal runaway for a diode on its own heatsink
150 °C
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-l)
Thermal resistance junction to lead 15 °C/W
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Typ. Max. Unit
I
R
(1)
1. Pulse test: t
p
= 380 µs, δ < 2%
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
80 300 µA
T
j
= 125 °C 66 135 mA
V
F
(1)
Forward voltage drop
T
j
= 25 °C
I
F
= 3 A
0.462 0.57
V
T
j
= 125 °C 0.41 0.51
dPtot
dTj
---------------
1
Rth j a–()
------------ --------------
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