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APT33GF120B2RDQ2G

P1-P3P4-P6P7-P9
052-6280 Rev A 11-2005
APT33GF120B2_LRDQ2(G)
V
GE
=15V,T
J
=125°C
V
GE
=15V,T
J
=25°C
V
CE
= 800V
R
G
= 4.3Ω
L = 100µH
SWITCHING ENERGY LOSSES (µJ) E
ON2
, TURN ON ENERGY LOSS (µJ) t
r,
RISE TIME (ns) t
d(ON)
, TURN-ON DELAY TIME (ns)
SWITCHING ENERGY LOSSES (µJ) E
OFF
, TURN OFF ENERGY LOSS (µJ) t
f,
FALL TIME (ns) t
d
(OFF)
, TURN-OFF DELAY TIME (ns)
I
CE
, COLLECTOR TO EMITTER CURRENT (A) I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A) I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current FIGURE 12, Current Fall Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A) I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G
, GATE RESISTANCE (OHMS) T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance FIGURE 16, Switching Energy Losses vs Junction Temperature
R
G
= 4.3Ω, L = 100µH, V
CE
= 800V
V
CE
= 800V
T
J
= 25°C, or 125°C
R
G
= 4.3Ω
L = 100µH
V
GE
= 15V
T
J
= 25 or 125°C,V
GE
= 15V
0 10 20 30 40 50 60 0 10 20 30 40 50 60
0 10 20 30 40 50 60 0 10 20 30 40 50 60
0 10 20 30 40 50 60 0 10 20 30 40 50 60
0 10 20 30 40 50 0 25 50 75 100 125
R
G
= 4.3Ω, L
= 100
µH, V
CE
=
800V
20
15
10
5
0
70
60
50
40
30
20
10
0
10,000
8,000
6,000
4,000
2,000
0
18,000
16,000
14,000
12,000
10,000
8,000
6,000
4,000
2,000
0
T
J
= 125°C, V
GE
= 15V
T
J
= 25°C, V
GE
=
15V
250
200
150
100
50
0
160
140
120
100
80
60
40
20
0
4,000
3,500
3,000
2,500
2,000
1,500
1,000
500
0
9,000
8,000
7,000
6,000
5,000
4,000
3,000
2,000
1,000
0
V
CE
= 800V
V
GE
= +15V
R
G
= 4.3Ω
T
J
=
125°C
T
J
=
25°C
V
CE
= 800V
V
GE
= +15V
R
G
= 4.3Ω
T
J
=
125°C
T
J
=
25°C
E
on2,
50A
E
off,
50A
E
on2,
25A
E
off,
25A
E
on2,
12.5A
E
off,
12.5A
V
CE
= 800V
V
GE
= +15V
T
J
= 125°C
V
CE
= 800V
V
GE
= +15V
R
G
= 4.3Ω
E
on2,
50A
E
off,
50A
E
on2,
25A
E
off,
25A
E
on2,
12.5A
E
off,
12.5A
052-6280 Rev A 11-2005
APT33GF120B2_LRDQ2(G)
TYPICAL PERFORMANCE CURVES
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
0.3
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
3,000
1,000
500
100
50
10
80
70
60
50
40
30
20
10
0
C, CAPACITANCE (
P
F)
I
C
, COLLECTOR CURRENT (A)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage Figure 18,Minimim Switching Safe Operating Area
0
10 20 30 40 50 0 200 400 600 800 1000 1200 1400
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
5
10 15 20 25 30 35 40 45 50
F
MAX
, OPERATING FREQUENCY (kHz)
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
T
J
= 125°C
T
C
= 75°C
D = 50 %
V
CE
= 800V
R
G
= 4.3Ω
100
50
10
5
0
0.5
0.1
0.05
F
max
= min (f
max
, f
max2
)
0.05
f
max1
=
t
d(on)
+ t
r
+ t
d(off)
+ t
f
P
diss
- P
cond
E
on2
+ E
off
f
max2
=
P
diss
=
T
J
- T
C
R
θJC
C
res
C
ies
C
oes
D = 0.9
0.7
Peak T
J
= P
DM
x Z
θJC
+
T
C
Duty Factor D =
t
1
/
t
2
t
2
t
1
P
DM
Note:
0.125
0.225
0.0138
0.148
Power
(watts)
R
C MODEL
Junction
temp. (°C)
Case temperature. (°C)
052-6280 Rev A 11-2005
APT33GF120B2_LRDQ2(G)
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 23, Turn-off Switching Waveforms and Definitions
T
J
= 125°C
Switching Energy
5%
10%
t
d(on)
90%
10%
t
r
5%
T
J
= 125°C
Switching Energy
0
90%
t
d(off)
10%
t
f
90%
I
C
A
D.U.T.
V
CE
Figure 21, Inductive Switching Test Circuit
V
CC
APT40DQ120
Collector Current
Collector Voltage
Gate Voltage
Collector Voltage
Collector Current
Gate Voltage
P1-P3P4-P6P7-P9

APT33GF120B2RDQ2G

Mfr. #:
Buy APT33GF120B2RDQ2G
Manufacturer:
Microchip / Microsemi
Description:
IGBT Transistors FG, IGBT-COMBI, 1200V, TO-247 T-MAX, RoHS
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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