ZXTD718MCTA

P1-P3 P4-P6 P7-P7

ZXTD718MC

Document Number DS32000 Rev. 2 - 2

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Electrical Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage

BV

CBO

-25 -35 - V

I

C

= -100µA

Collector-Emitter Breakdown Voltage (Note 10)

BV

CEO

-20 -25 - V

I

C

= 10mA

Emitter-Base Breakdown Voltage

BV

EBO

-7 8.5 - V

I

E

= -100µA

Collector Cutoff Current

I

CBO

- - -100 nA

V

CB

= -20V

Emitter Cutoff Current

I

EBO

- - -100 nA

V

EB

= -6V

Collector Emitter Cutoff Current

I

CES

- - -100 nA

V

CES

= -16V

Static Forward Current Transfer Ratio (Note 10)

h

FE

300 475 -

-

I

C

= -10mA, V

CE

= -2V

300 450 -

I

C

= -100mA, V

CE

= -2V

150 230 -

I

C

= -2A, V

CE

= -2V

15 30 -

I

C

= -6A, V

CE

= -2V

Collector-Emitter Saturation Voltage (Note 10)

V

CE(sat)

- -19 -30

mV

I

C

= - 0.1A, I

B

= -10mA

- -170 -220

I

C

= -1A, I

B

= -20mA

- -190 -250

I

C

= -1.5A, I

B

= -50mA

- -240 -350

I

C

= -2.5A, I

B

= -150mA

- -225 -300

I

C

= -3.5A, I

B

= -350m

Base-Emitter Turn-On Voltage (Note 10)

V

BE

(

on

)

- -0.87 -0.95 V

I

C

= -3.5A, V

CE

= -2V

Base-Emitter Saturation Voltage (Note 10)

V

BE

(

sat

)

- -1.01 -1.12 V

I

C

= -3.5A, I

B

= -350mA

Output Capacitance

C

obo

- 21 30 pF

V

CB

= 10V, f = 1MHz

Transition Frequency

f

T

150 180 - MHz

V

CE

= -10V, I

C

= -50mA,

f = 100MHz

Turn-On Time

t

on

- 40 - ns

V

CC

= -10V, I

C

= 1A

I

B1

= I

B2

= 20mA

Turn-Off Time

t

off

- 670 - ns

Notes: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%

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Document Number DS32000 Rev. 2 - 2

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Typical Electrical Characteristics

1m 10m 100m 1 10

10m

100m

1

1m 10m 100m 1 10

0.00

0.05

0.10

0.15

0.20

0.25

1m 10m 100m 1 10

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1m 10m 100m 1 10

0.4

0.6

0.8

1.0

1m 10m 100m 1 10

0.2

0.4

0.6

0.8

1.0

0

90

180

270

360

450

540

630

V

CE(SAT)

v I

C

Tamb=25°C

I

C

/I

B

=100

I

C

/I

B

=50

I

C

/I

B

=10

V

CE(SAT)

(V)

I

C

Collector Current (A)

V

BE(SAT)

v I

C

I

C

/I

B

=50

100°C

25°C

-55°C

V

CE(SAT)

(V)

I

C

Collector Current (A)

h

FE

v I

C

V

CE

=2V

-55°C

25°C

100°C

Normalised Gain

I

C

Collector Current (A)

25°C

V

CE(SAT)

v I

C

I

C

/I

B

=50

100°C

-55°C

V

BE(SAT)

(V)

I

C

Collector Current (A)

V

BE(ON)

v I

C

V

CE

=2V

100°C

25°C

-55°C

V

BE(ON)

(V)

I

C

Collector Current (A)

Typical Gain (h

FE

)

ZXTD718MC

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Package Outline Dimensions

Suggested Pad Layout

DFN3020B-8

Dim Min Max Typ

A 0.77 0.83 0.80

A1 0 0.05 0.02

A3 - - 0.15

b 0.25 0.35 0.30

D 2.95 3.075 3.00

D2 0.82 1.02 0.92

D4 1.01 1.21 1.11

e - - 0.65

E 1.95 2.075 2.00

E2 0.43 0.63 0.53

L 0.25 0.35 0.30

Z - - 0.375

All Dimensions in mm

Dimensions Value (in mm)

C 0.650

G 0.285

G1 0.090

X 0.400

X1 1.120

Y 0.730

Y1 0.500

Y2 0.365

b

e

E2

D2

L

D

E

A

Z

A1

A3

D4

D4

C

X1

G1

X

Y1

Y

Y2

G

P1-P3 P4-P6 P7-P7

ZXTD718MCTA

Mfr. #:

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Manufacturer:

Diodes Incorporated

Description:

Bipolar Transistors - BJT Dual 20V PNP-20V 64mOhm 4.5A IC

Lifecycle:

New from this manufacturer.

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ZXTD718MCTA