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SQ4850EY-T1_GE3

P1-P3P4-P6P7-P9P10-P11
SQ4850EY
www.vishay.com
Vishay Siliconix
S15-1878-Rev. F, 17-Aug-15
1
Document Number: 68878
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET
®
power MOSFET
• 100 % R
g
and UIS tested
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. When mounted on 1" square PCB (FR4 material).
PRODUCT SUMMARY
V
DS
(V) 60
R
DS(on)
(Ω) at V
GS
= 10 V 0.022
R
DS(on)
(Ω) at V
GS
= 4.5 V 0.031
I
D
(A) 12
Configuration Single
Package SO-8
Top View
SO-8 Single
1
S
2
S
3
S
1
2
S
3
S
4
G
D
7
D
6
D
5
D
8
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
60
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
T
C
= 25 °C
I
D
12
A
T
C
= 125 °C 6.9
Continuous Source Current (Diode Conduction) I
S
6.2
Pulsed Drain Current
a
I
DM
48
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
23
Single Pulse Avalanche Energy E
AS
26 mJ
Maximum Power Dissipation
a
T
C
= 25 °C
P
D
6.8
W
T
C
= 125 °C 2.2
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
b
R
thJA
85
°C/W
Junction-to-Foot (Drain) R
thJF
22
SQ4850EY
www.vishay.com
Vishay Siliconix
S15-1878-Rev. F, 17-Aug-15
2
Document Number: 68878
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0, I
D
= 250 μA 60 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 1.5 2 2.5
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
= 60 V - - 1.0
μA V
GS
= 0 V V
DS
= 60 V, T
J
= 125 °C - - 50
V
GS
= 0 V V
DS
= 60 V, T
J
= 175 °C - - 150
On-State Drain Current
a
I
D(on)
V
GS
= 10 V V
DS
≥ 5 V 30 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V I
D
= 6 A - 0.017 0.022
Ω
V
GS
= 10 V I
D
= 6 A, T
J
= 125 °C - 0.029 0.037
V
GS
= 10 V I
D
= 6 A, T
J
= 175 °C - 0.037 0.047
V
GS
= 4.5 V I
D
= 5 A - 0.025 0.031
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 6 A - 21 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V V
DS
= 25 V, f = 1 MHz
- 1000 1250
pF Output Capacitance C
oss
- 185 235
Reverse Transfer Capacitance C
rss
-7595
Total Gate Charge
c
Q
g
V
GS
= 10 V V
DS
= 30 V, I
D
= 6 A
-2030
nC Gate-Source Charge
c
Q
gs
-2.9-
Gate-Drain Charge
c
Q
gd
-4.4-
Gate Resistance R
g
f = 1 MHz 0.3 - 2.1 Ω
Turn-On Delay Time
c
t
d(on)
V
DD
= 30 V, R
L
= 30 Ω
I
D
≅ 1 A, V
GEN
= 10 V, R
g
= 1 Ω
-711
ns
Rise Time
c
t
r
-914
Turn-Off Delay Time
c
t
d(off)
-2335
Fall Time
c
t
f
-914
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
--48A
Forward Voltage V
SD
I
F
= 1.7 A, V
GS
= 0 - 0.8 1.2 V
SQ4850EY
www.vishay.com
Vishay Siliconix
S15-1878-Rev. F, 17-Aug-15
3
Document Number: 68878
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
8
16
24
32
40
0246810
V
GS
=10Vthru5V
V
GS
=4V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)
I
D
V
GS
=3V
V
GS
=2V
0
10
20
30
40
50
0 5 10 15 20 25
T
C
= 125 °C
T
C
= -55 °C
T
C
= 25 °C
- Transconductance (S)
g
fs
- Drain Current (A)I
D
C
rss
0
500
1000
1500
0 102030405060
C
iss
C
oss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.00
0.02
0.04
0.06
0.08
0.10
0 8 16 24 32 40
V
GS
=10V
V
GS
=4.5V
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
0
2
4
6
8
10
0 5 10 15 20
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
I
D
=6A
V
DS
=30V
P1-P3P4-P6P7-P9P10-P11

SQ4850EY-T1_GE3

Mfr. #:
Buy SQ4850EY-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 60V 12A 6.8W AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
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