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BSL307SPT

P1-P3P4-P6P7-P9
2014-01-09
Page 4
Rev 2.0
BSL307SP
1 Power dissipation
P
tot
= f (T
A
)
0 20 40 60 80 100 120
°C
160
T
A
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
W
2.2
BSL307SP
P
tot
2 Drain current
I
D
= f (T
A
)
parameter: |V
GS
|≥ 10 V
0 20 40 60 80 100 120
°C
160
T
A
0
-0.5
-1
-1.5
-2
-2.5
-3
-3.5
-4
-4.5
-5
A
-6
BSL307SP
I
D
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 , T
A
= 25 °C
-10
-1
-10
0
-10
1
-10
2
V
V
DS
-2
-10
-1
-10
0
-10
1
-10
2
-10
A
BSL307SP
I
D
R
D
S
(
o
n
)
=
V
D
S
/
I
D
DC
10 ms
1 ms
100 µs
t
p
= 90.0µs
4 Transient thermal impedance
Z
thJS
= f (t
p
)
parameter : D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
K/W
BSL307SP
Z
thJS
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2014-01-09
Page 5
Rev 2.0
BSL307SP
5 Typ. output characteristic
I
D
= f (V
DS
); T
j
=25°C
parameter: t
p
= 80 µs
0 1 2 3 4 5 6 7 8
V
10
- V
DS
0
10
20
30
A
50
- I
D
Vgs = -4V
Vgs = -3V
Vgs = -3.5V
Vgs = -4.5V
Vgs = -5V
Vgs = -5.5V
Vgs = -6V
Vgs = -7V
Vgs = -8V
Vgs = -10V
6 Typ. drain-source on resistance
R
DS(on)
= f (I
D
)
parameter: V
GS
0 5 10 15 20 25 30 35 40
A
50
- I
D
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
Ω
0.1
R
DS(on)
Vgs = -3.5V Vgs = -4.5V
Vgs = -4V
Vgs= - 3V
Vgs = - 3.5V
Vgs = - 4.5V
Vgs= - 6V
Vgs = - 10V
7 Typ. transfer characteristics
I
D
= f ( V
GS
); |V
DS
|≥ 2 x |I
D
| x R
DS(on)max
parameter: t
p
= 80 µs
0 1 2 3
V
5
- V
GS
0
4
8
12
A
20
- I
D
8 Typ. forward transconductance
g
fs
= f(I
D
); T
j
=25°C
parameter: t
p
= 80 µs
0 5 10
A
20
- I
D
0
2.5
5
7.5
10
S
15
g
fs
2014-01-09
Page 6
Rev 2.0
BSL307SP
9 Drain-source on-resistance
R
DS(on)
= f(T
j
)
parameter: I
D
= -5.5 A, V
GS
= -10 V
-60 -20 20 60 100
°C
160
T
j
20
25
30
35
40
45
50
mΩ
60
R
DS(on)
typ.
98%
10 Typ. gate threshold voltage
V
GS(th)
= f (T
j
)
parameter: V
GS
= V
DS
-60 -20 20 60 100
°C
160
T
j
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
V
2.4
- V
GS(th)
2%
typ.
98%
11 Typ. capacitances
C = f (V
DS
)
parameter: V
GS
=0, f=1 MHz
0 5 10 15 20
V
30
- V
DS
2
10
3
10
4
10
pF
C
Crss
Coss
Ciss
12 Forward character. of reverse diode
I
F
= f (V
SD
)
parameter: T
j
, tp = 80 µs
0 -0.4 -0.8 -1.2 -1.6 -2 -2.4
V
-3
V
SD
-1
-10
0
-10
1
-10
2
-10
A
BSL307SP
I
F
T
j
= 25 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C typ
T
j
= 150 °C (98%)
P1-P3P4-P6P7-P9

BSL307SPT

Mfr. #:
Buy BSL307SPT
Manufacturer:
Infineon Technologies
Description:
MOSFET P-CH 30V 5.5A 6-TSOP
Lifecycle:
New from this manufacturer.
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