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VNP14N04

P1-P3P4-P6P7-P9P10-P11
VNP14N04
"OMNIFET":
FULLY AUTOPROTECTED POWER MOSFET
April 1996
1
2
3
TO-220
BLOCK DIAGRAM
TYPE V
clamp
R
DS(on)
I
lim
VNP14N04 42 V 0.07 Ω 14 A
■ LINEAR CURRENT LIMITATION
■ THERMAL SHUT DOWN
■ SHORT CIRCUIT PROTECTION
■ INTEGRATED CLAMP
■ LOW CURRENT DRAWN FROM INPUT PIN
■ DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
■ ESD PROTECTION
■ DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
■ COMPATIBLE WITH STANDARD POWER
MOSFET
■ STANDARD TO-220 PACKAGE
DESCRIPTION
The VNP14N04 is a monolithic device made
using SGS-THOMSON Vertical Intelligent Power
M0 Technology, intended for replacement of
standard power MOSFETS in DC to 50 KHz
applications. Built-in thermal shut-down, linear
current limitation and overvoltage clamp protect
the chip in harsh enviroments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
1/11
ABSOLUTE MAXIMUM RATING
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (V
in
= 0) Internally Clamped V
V
in
Input Voltage 18 V
I
D
Drain Current Internally Limited A
I
R
Reverse DC Output Current -14 A
V
esd
Electrostatic Discharge (C= 100 pF, R=1.5 KΩ) 2000 V
P
tot
Total Dissipation at T
c
= 25
o
C50W
T
j
Operating Junction Temperature Internally Limited
o
C
T
c
Case Operating Temperature Internally Limited
o
C
T
stg
Storage Temperature -55 to 150
o
C
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
2.5
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
CLAMP
Drain-source Clamp
Voltage
I
D
= 200 mA V
in
= 0 364248 V
V
CLTH
Drain-source Clamp
Threshold Voltage
I
D
= 2 mA V
in
= 0 35 V
V
INCL
Input-Source Reverse
Clamp Voltage
I
in
= -1 mA -1 -0.3 V
I
DSS
Zero Input Voltage
Drain Current (V
in
= 0)
V
DS
= 13 V V
in
= 0
V
DS
= 25 V V
in
= 0
50
200
µA
µA
I
ISS
Supply Current from
Input Pin
V
DS
= 0 V V
in
= 10 V 250 500 µA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
IN(th)
Input Threshold
Voltage
V
DS
= V
in
I
D
+ Ii
n
= 1 mA 0.8 3 V
R
DS(on)
Static Drain-source On
Resistance
V
in
= 10 V I
D
= 7 A
V
in
= 5 V I
D
= 7 A
0.07
0.1
Ω
Ω
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(∗) Forward
Transconductance
V
DS
= 13 V I
D
= 7 A 8 10 S
C
oss
Output Capacitance V
DS
= 13 V f = 1 MHz V
in
= 0 400 500 pF
VNP14N04
2/11
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING (∗∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 15 V I
d
= 7 A
V
gen
= 10 V R
gen
= 10 Ω
(see figure 3)
60
160
250
100
120
300
400
200
ns
ns
ns
ns
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 15 V I
d
= 7 A
V
gen
= 10 V R
gen
= 1000 Ω
(see figure 3)
300
1.5
5.5
1.8
500
2.2
7.5
2.5
ns
µs
µs
µs
(di/dt)
on
Turn-on Current Slope V
DD
= 15 V I
D
= 7 A
V
in
= 10 V R
gen
= 10 Ω
120 A/µs
Q
i
Total Input Charge V
DD
= 12 V I
D
= 7 A V
in
= 10 V 30 nC
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
SD
(∗) Forward On Voltage I
SD
= 7 A V
in
= 0 1.6 V
t
rr
(∗∗)
Q
rr
(∗∗)
I
RRM
(∗∗)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 7 A di/dt = 100 A/µs
V
DD
= 30 V T
j
= 25
o
C
(see test circuit, figure 5)
110
0.34
6.1
ns
µC
A
PROTECTION
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
lim
Drain Current Limit V
in
= 10 V V
DS
= 13 V
V
in
= 5 V V
DS
= 13 V
10
10
14
14
20
20
A
A
t
dlim
(∗∗) Step Response
Current Limit
V
in
= 10 V
V
in
= 5 V
30
80
60
150
µs
µs
T
jsh
(∗∗) Overtemperature
Shutdown
150
o
C
T
jrs
(∗∗) Overtemperature Reset 135
o
C
I
gf
(∗∗) Fault Sink Current V
in
= 10 V V
DS
= 13 V
V
in
= 5 V V
DS
= 13 V
50
20
mA
mA
E
as
(∗∗) Single Pulse
Avalanche Energy
starting T
j
= 25
o
C V
DD
= 20 V
V
in
= 10 V R
gen
= 1 KΩ L = 10 mH
0.65 J
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(∗∗) Parameters guaranteed by design/characterization
VNP14N04
3/11
P1-P3P4-P6P7-P9P10-P11

VNP14N04

Mfr. #:
Buy VNP14N04
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 42V 14A OmniFET
Lifecycle:
New from this manufacturer.
Delivery:
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