OMO ElectronicOMO Electronic
Expand menu
0 Cart

STD60NF55LAT4

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
Electrical characteristics STD60NF55LA
4/16 ID 11226 Rev 3
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
breakdown voltage
I
D
= 250 μA, V
GS
=0 55 V
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
V
DS
= 55 V
V
DS
= 55 V, T
C
=125 °C
1
10
μA
μA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 15 V ±100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 μA 1 2 V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10 V, I
D
= 30 A
V
GS
= 5 V, I
D
= 30 A
0.012
0.014
0.015
0.017
Ω
Ω
I
D(on)
On state drain current
V
GS
= 3.5 V, V
DS
>12 V
-55 °C < Tj < 150 °C
35 A
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
Forward
transconductance
V
DS
= 10 V, I
D
= 30 A - 35 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0
-
1950
390
130
pF
pF
pF
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 25 V, I
D
= 30 A
R
G
=4.7 Ω V
GS
= 4.5 V
(see Figure 14)
-
30
180
80
35
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 40 V, I
D
= 60 A,
V
GS
= 5 V, R
G
=4.7 Ω
(see Figure 15)
-
40
10
20
56 nC
nC
nC
STD60NF55LA Electrical characteristics
ID 11226 Rev 3 5/16
Table 6. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
I
SDM
(1)
1. Pulse width limited by safe operating area.
Source-drain current
Source-drain current
(pulsed)
-
60
240
A
A
V
SD
(2)
2. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
Forward on voltage I
SD
= 60 A, V
GS
= 0 - 1.3 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 40 A,
di/dt = 100 A/μs,
V
DD
= 25 V, T
j
= 150 °C
(see Figure 16)
-
65
130
4
ns
nC
A
Electrical characteristics STD60NF55LA
6/16 ID 11226 Rev 3
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characterisics Figure 5. Transfer characteristics
Figure 6. Transconductance Figure 7. Static drain-source on resistance
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

STD60NF55LAT4

Mfr. #:
Buy STD60NF55LAT4
Manufacturer:
STMicroelectronics
Description:
MOSFET N-channel 55 V, 0.012 Ohm, 60 A DPAK STripFET(TM) II Power MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet