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IRLR3410TRR
P1-P3
P4-P6
P7-P9
P10-P11
IRLR/U3410
www.irf.com
7
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T
. I
SD
Waveform
D.U.T
. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
+
-
+
+
+
-
-
-
Fig 14.
For N-Channel HEXFETS
*
V
GS
= 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
R
G
V
DD
•
dv/dt controlled by R
G
•
Driver same type as D.U.T.
•
I
SD
controlled by Duty Factor "D"
•
D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
*
IRLR/U3410
8
www.irf.com
P
ac
kage Outline
TO-252AA Outline
Dimensions are shown in millimeters (inches)
TO-252AA (D-PARK)
P
ar
t Mar
king Inf
or
mation
6.
73 (.
265)
6.
35 (.
250)
- A
-
4
1
2
3
6.
22 (.
245)
5.
97 (.
235)
- B
-
3X
0.
89 (.
035)
0.
64 (.
025)
0.
25 (.
010)
M A M
B
4.
57
(.
180)
2.
28
(.
090)
2X
1.
14 (.
045)
0.
76 (.
030)
1.
52 (.
060)
1.
15 (.
045)
1.
02 (.
040)
1.
64 (.
025)
5.
46 (.
215)
5.
21 (.
205)
1.
27 (.
050)
0.
88 (.
035)
2.
38 (.
094)
2.
19 (.
086)
1.
14 (.
045)
0.
89 (.
035)
0.
58 (.
023)
0.
46 (.
018)
6.
45 (.
245)
5.
68 (.
224)
0.
51 (.
020)
M
IN
.
0.
58 (.
023)
0.
46 (.
018)
LEAD ASSI
GNMENTS
1
- G
A
T
E
2
- D
R
A
I
N
3
- S
O
U
R
C
E
4
- D
R
A
I
N
10.
42 (.
410)
9.
40 (.
370)
NOTES:
1
D
I
M
E
N
SI
O
N
I
N
G
& TO
LE
RA
NC
I
N
G
P
ER
AN
SI
Y14.
5M,
1982.
2
CONT
ROL
L
I
NG DI
MENS
I
ON :
I
NCH
.
3
C
O
N
F
O
R
M
S
T
O
JE
D
E
C
O
U
T
L
IN
E
T
O
-
2
5
2
A
A
.
4
DI
MEN
SI
ONS SHOW
N ARE BEFORE SOL
DER DI
P,
S
OLD
E
R
D
I
P M
A
X.
+0.
16 (
.
006)
.
I
NTERNATI
O
NAL
R
E
C
T
IF
IE
R
L
O
G
O
ASSE
MB
LY
L
O
T
C
O
D
E
E
X
A
M
P
L
E
:
T
H
IS
IS
A
N
IR
F
R
1
2
0
W
IT
H
A
S
S
E
M
B
L
Y
L
O
T
C
O
D
E
9
U
1
P
F
I
RST P
ORT
I
ON
OF PART NUMBER
SE
COND P
ORT
I
ON
OF PART
NUMBER
120
IR
F
R
9
U
1
P
A
IRLR/U3410
www.irf.com
9
P
ac
kage Outline
TO-251AA Outline
Dimensions are shown in millimeters (inches)
TO-251AA (I-PARK)
P
ar
t Mar
king Inf
or
mation
6.
73 (.
265)
6.
35 (.
250)
- A
-
6.
22 (.
245)
5.
97 (.
235)
- B
-
3X
0.
89 (.
035)
0.
64 (.
025)
0.
25 (.
010)
M A M
B
2.
28 (.
090)
1.
14 (.
045)
0.
76 (.
030)
5.
46 (.
215)
5.
21 (.
205)
1.
27 (.
050)
0.
88 (.
035)
2.
38 (.
094)
2.
19 (.
086)
1.
14 (.
045)
0.
89 (.
035)
0.
58 (.
023)
0.
46 (.
018)
LEAD ASSI
GNMENTS
1
- G
A
T
E
2
- D
R
A
IN
3
- S
O
U
R
C
E
4
- D
R
A
IN
NOTES:
1
D
I
M
E
NS
I
O
N
I
N
G
& TO
LE
RA
N
C
I
N
G
PE
R
AN
S
I
Y14.5
M
,
1982.
2
CONT
ROL
L
I
NG DI
MEN
SI
ON :
I
NCH.
3
C
O
N
F
O
R
M
S
T
O
J
E
D
E
C
O
U
T
L
IN
E
T
O
-
2
5
2
A
A
.
4
DI
MENSI
ONS SHOW
N ARE BEFORE SOL
DER DI
P,
S
O
L
D
E
R
D
IP
M
A
X
. +
0
.1
6
(
.0
0
6
)
.
9.
65 (.
380)
8.
89 (.
350)
2X
3X
2.
28 (.
090)
1.
91 (.
075)
1.
52 (.
060)
1.
15 (.
045)
4
1
2
3
6.
45 (.
245)
5.
68 (.
224)
0.
58 (.
023)
0.
46 (.
018)
IN
T
E
R
N
A
T
IO
N
A
L
R
E
C
T
I
F
IE
R
L
O
G
O
ASSEMBLY
L
O
T
C
O
D
E
FI
R
S
T P
O
RT
I
O
N
OF PART NUM
BE
R
SECON
D PO
RTI
ON
OF PA
RT
NUMBER
120
9U
1P
EXAMPLE :
THI
S
I
S AN
I
RFU120
W
I
TH ASSEM
BLY
L
O
T
C
O
D
E
9
U
1
P
IR
F
U
P1-P3
P4-P6
P7-P9
P10-P11
IRLR3410TRR
Mfr. #:
Buy IRLR3410TRR
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 100V 17A DPAK
Lifecycle:
New from this manufacturer.
Delivery:
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