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NCV1729SN35T1G

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P23
© Semiconductor Components Industries, LLC, 2016
February, 2016 − Rev. 6
1 Publication Order Number:
NCP1729/D
NCP1729
Switched Capacitor
Voltage Inverter
The NCP1729 is a CMOS charge pump voltage inverter that is
designed for operation over an input voltage range of 1.5 V to 5.5 V
with an output current capability in excess of 50 mA. The operating
current consumption is only 122 mA, and a power saving shutdown
input is provided to further reduce the current to a mere 0.4 mA. The
device contains a 35 kHz oscillator that drives four low resistance
MOSFET switches, yielding a low output resistance of 26 W and a
voltage conversion efficiency of 99%. This device requires only two
external 3.3 mF capacitors for a complete inverter making it an ideal
solution for numerous battery powered and board level applications.
The NCP1729 is available in the space saving TSOP−6 package.
Features
• Operating Voltage Range of 1.5 V to 5.5 V
• Output Current Capability in Excess of 50 mA
• Low Current Consumption of 122 mA
• Power Saving Shutdown Input for a Reduced Current of 0.4 mA
• Operation at 35 kHz
• Low Output Resistance of 26 W
• Space Saving TSOP−6 Package
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• LCD Panel Bias
• Cellular Telephones
• Pagers
• Personal Digital Assistants
• Electronic Games
• Digital Cameras
• Camcorders
• Hand Held Instruments
6
4
2
3
1
Figure 1. Typical Application
−V
out
V
in
5
This device contains 77 active transistors.
PIN CONNECTIONS
1
3
GND
V
out
2
C−
4
C+
6
(Top View)
5
SHDN
TSOP−6
(SOT23−6)
SN SUFFIX
CASE 318G
MARKING
DIAGRAM
XXXAYW G
G
XXX = Device Code
A = Assembly Location
Y = Year
W = Work Week
G = Pb−Free Package
1
6
V
in
1
www.onsemi.com
(Note: Microdot may be in either location)
See detailed ordering, marking and shipping information in the
package dimensions section on page 22 of this data sheet.
ORDERING INFORMATION
NCP1729
www.onsemi.com
2
MAXIMUM RATINGS*
Rating Symbol Value Unit
Input Voltage Range (V
in
to GND) V
in
−0.3 to 6.0 V
Output Voltage Range (V
out
to GND) V
out
−6.0 to 0.3 V
Output Current I
out
100 mA
Output Short Circuit Duration (V
out
to GND) t
SC
Indefinite sec
Operating Junction Temperature T
J
150 °C
Power Dissipation and Thermal Characteristics
Thermal Resistance, Junction−to−Air
Maximum Power Dissipation @ T
A
= 70°C
R
q
JA
P
D
256
313
°C/W
mW
Storage Temperature T
stg
−55 to 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*ESD Ratings
ESD Machine Model Protection up to 200 V, Class B
ESD Human Body Model Protection up to 2000 V, Class 2
ELECTRICAL CHARACTERISTICS (V
in
= 5.0 V, C
1
= 3.3 mF, C
2
= 3.3 mF, T
A
= −40°C to 85°C, typical values shown are for
T
A
= 25°C unless otherwise noted. See Figure 14 for Test Setup.)
Characteristic
Symbol Min Typ Max Unit
Operating Supply Voltage Range (SHDN = V
in
, R
L
= 10 k) V
in
1.5 − 5.5 V
Supply Current Device Operating (SHDN = 5.0 V, R
L
= R)
T
A
= 25°C
T
A
= 85°C
I
in
−
−
122
128
200
200
mA
Supply Current Device Shutdown (SHDN = 0 V)
T
A
= 25°C
T
A
= 85°C
I
SHDN
−
−
0.4
1.7
−
−
mA
Oscillator Frequency
T
A
= 25°C
T
A
= −40°C to 85°C
f
OSC
24.5
19
33.5
−
45.6
54
kHz
Output Resistance (I
out
= 25 mA, Note 1) R
out
− 26 50
W
Voltage Conversion Efficiency (R
L
= R) V
EFF
99 99.9 − %
Power Conversion Efficiency (R
L
= 1.0 k) P
EFF
− 96 − %
Shutdown Input Threshold Voltage (V
in
= 1.5 V to 5.5 V)
High State, Device Operating
Low State, Device Shutdown
V
th(SHDN)
−
−
0.6 V
in
0.5 V
in
−
−
V
Shutdown Input Bias Current
High State, Device Operating, SHDN
= 5.0 V
T
A
= 25°C
T
A
= 85°C
Low State, Device Shutdown, SHDN
= 0 V
T
A
= 25°C
T
A
= 85°C
I
IH
I
IL
−
−
−
−
5.0
100
5.0
100
−
−
−
−
pA
Wake−Up Time from Shutdown (R
L
= 1.0 k) t
WKUP
− 1.0 − ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Capacitors C
1
and C
2
contribution is approximately 20% of the total output resistance.
NCP1729
www.onsemi.com
3
TYPICAL CHARACTERISTICS
130
120
100
110
90
80
40
33
34
32
35
36
37
38
39
200
R
out
, OUTPUT RESISTANCE (W)
T
A
, AMBIENT TEMPERATURE (°C)
Figure 2. Output Resistance vs. Supply Voltage Figure 3. Output Resistance vs. Ambient
Temperature
R
out
, OUTPUT RESISTANCE (W)
0
35
30
25
20
502010
15
10
5
0
40
Figure 4. Output Current vs. Capacitance
C
1
, C
2
, C
3
, CAPACITANCE (mF)
Figure 5. Output Voltage Ripple vs.
Capacitance
C
1
, C
2
, C
3
, CAPACITANCE (mF)
V
out
, OUTPUT VOLTAGE RIPPLE (mV
p−p
)
I
out
, OUTPUT CURRENT (mA)
Figure 6. Supply Current vs. Supply Voltage
V
in
, SUPPLY VOLTAGE (V)
Figure 7. Oscillator Frequency vs. Ambient
Temperature
T
A
, AMBIENT TEMPERATURE (°C)
I
in
, SUPPLY CURRENT (
m
A)
f
OSC
, OSCILLATOR FREQUENCY (kHz)
−50 25 10
0
100
250
50
150
0
300
350
Figure 14 Test Setup
T
A
= 25°C
V
in
= 1.5 V
T
A
= 85°C
V
in
, SUPPLY VOLTAGE (V)
60
30
80
20
40
50
70
90
100
−25 0 50 75
30 0 5
0
2010 4030
70
60
50
1.5 3.02.52.0 3.5 4.0 4.5 5.0 −50 25 10
0
−25 0 50 75
Figure 14 Test Setup
V
in
= 2.0 V
V
in
= 3.3 V
V
in
= 5.0 V
V
in
= 4.75 V
V
out
= −4.00 V
V
in
= 3.15 V
V
out
= −2.50 V
V
in
= 1.90 V
V
out
= −1.50 V
Figure 14 Test Setup
T
A
= 25°C
Figure 14 Test Setup
R
L
= ∞
T
A
= 25°C
T
A
= −40°C
V
in
= 1.5 V
V
in
= 3.3 V
V
in
= 5.0 V
Figure 14 Test Setup
Figure 14 Test Setup
T
A
= 25°C
20
60
40
80
70
50
30
90
100
1.0 5.03.52.5 5.54.54.03.02.01.5
V
in
= 4.75 V
V
out
= −4.00 V
V
in
= 3.15 V
V
out
= −2.50 V
V
in
= 1.90 V
V
out
= −1.50 V
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P23

NCV1729SN35T1G

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Buy NCV1729SN35T1G
Manufacturer:
ON Semiconductor
Description:
Inverters SW CAP VOLTAGE INVER
Lifecycle:
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