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PMBT3904MB,315

P1-P3P4-P6P7-P9P10-P12P13-P14
PMBT3904MB_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 7 March 2012 6 of 13
NXP Semiconductors
PMBT3904MB
40 V, 200 mA NPN switching transistor
V
CE
=1V
(1) T
amb
= 150 C
(2) T
amb
=25C
(3) T
amb
= 55 C
T
amb
=25C
Fig 3. DC current gain as a function of collector
current; typical values
Fig 4. Collector current as a function of
collector-emitter voltage; typical values
006aab115
200
400
600
h
FE
0
I
C
(mA)
10
−1
10
3
10
2
110
(1)
(2)
(3)
V
CE
(V)
0108462
006aab116
0.10
0.05
0.15
0.20
I
C
(A)
0.0
I
B
(mA) = 5.0
4.5
3.5
3.0
2.5
2.0
1.5
1.0
0.5
4.0
PMBT3904MB_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 7 March 2012 7 of 13
NXP Semiconductors
PMBT3904MB
40 V, 200 mA NPN switching transistor
V
CE
=1V
(1) T
amb
= 55 C
(2) T
amb
=25C
(3) T
amb
= 150 C
I
C
/I
B
=10
(1) T
amb
= 55 C
(2) T
amb
=25C
(3) T
amb
= 150 C
Fig 5. Base-emitter voltage as a function of collector
current; typical values
Fig 6. Base-emitter saturation voltage as a function
of collector current; typical values
I
C
/I
B
=10
(1) T
amb
= 150 C
(2) T
amb
=25C
(3) T
amb
= 55 C
Fig 7. Collector-emitter saturation voltage as a function of collector current; typical values
006aab117
0.4
0.8
1.2
V
BE
(V)
0
I
C
(mA)
10
−1
10
3
10
2
110
(1)
(2)
(3)
006aab118
I
C
(mA)
10
−1
10
3
10
2
110
0.5
0.9
1.3
V
BEsat
(V)
0.1
(1)
(2)
(3)
006aab119
I
C
(mA)
10
−1
10
3
10
2
110
10
−1
1
V
CEsat
(V)
10
−2
(1)
(3)
(2)
PMBT3904MB_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 7 March 2012 8 of 13
NXP Semiconductors
PMBT3904MB
40 V, 200 mA NPN switching transistor
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
V
I
= 5 V; t = 600 s; t
p
=10s; t
r
=t
f
3ns
R1 = 56 ; R2 = 2.5 k; R
B
=3.9k; R
C
= 270
V
BB
= 1.9 V; V
CC
=3V
Oscilloscope: input impedance Z
i
=50
Fig 8. Test circuit for switching times
R
C
R2
R1
DUT
mlb826
V
o
R
B
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
V
BB
V
I
V
CC
Fig 9. Package outline SOT883B
11-11-02Dimensions in mm
2
3
0.55
0.47
0.30
0.22
1
0.40
0.34
0.30
0.22
0.20
0.12
0.65
0.04 max
0.35
0.65
0.55
1.05
0.95
P1-P3P4-P6P7-P9P10-P12P13-P14

PMBT3904MB,315

Mfr. #:
Buy PMBT3904MB,315
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT 40V, 200 mA NPN Switching Transistor
Lifecycle:
New from this manufacturer.
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